Published: January 25, 2018
Qin Zhang, Mingda Li, Edward Lochocki, Suresh Vishwanath, Xinyu Liu, Rusen Yan, Huai-Hsun Lien, Malgorzata Dobrowolska, Jacek Furdyna, Kyle M. Shen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
SnSe2 is currently considered a potential 2D material that can form a near-broken gap heterojunction in a tunnel field-effect transistor (TFET) due to its conceivable large electron affinity, which is experimentally confirmed in this letter. With the results from internal photoemission and angle-resolved photoemission spectroscopy performed on Al/Al2O3/SnSe2/GaAs and SnSe2/GaAs test structures where SnSe2 is grown on GaAs by molecular beam epitaxy (MBE), we ascertain a 5.2±0.1 eV electron affinity of SnSe2. The band offset from SnSe2 Fermi level to Al2O3 conduction band minimum is found to be 3.3±0.05 eV and SnSe2 is seen to have a high level of intrinsic electron (n-type) doping with the Fermi level positioned at about 0.2 eV above its conduction band minimum. It is concluded that the electron affinity of SnSe2 is larger than most semiconductors and can be combined with other appropriate semiconductors to form near broken- gap heterojunctions for the tunnel field-effect transistor that can potentially achieve high on- currents.
Citation: Applied Physics Letters
Pub Type: Journals
Molecular beam epitaxy, internal photoemission, band offset, electron affinity, tunnel field- effect transistor
Created January 25, 2018, Updated November 10, 2018