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Search Publications by

Neil M. Zimmerman (Fed)

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Displaying 26 - 50 of 80

Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire

March 21, 2012
Ted C. Thorbeck, Neil M. Zimmerman
Unintentional quantum dots are a common problem for single electron devices in both silicon and carbon. To determine the cause of these dots it is helpful to know their size and location. Because each dot is capacitively coupled to multiple gates, we can

Impossibility of a pure resistance measurement: The charge-pileup model

September 30, 2010
Neil M. Zimmerman, Denis Mamaluy
Recently, we have experimentally demonstrated the existence of a capacitance between conductors, in the absence of an insulator. We show that a combination of current continuity and Poisson's equation leads to a charge pileup, and thus a capacitance

Quantum electrical standards

August 2, 2010
Neil M. Zimmerman
The ampere and other electrical units defined by international agreement are presently established through challenging experiments. A redefinition of those units based on quantum laws would enable a simpler and more reliable realization.

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

August 7, 2008
Neil M. Zimmerman, W H. Huber, Brian J. Simonds, Emmanouel S. Hourdakis, Fujiwara Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa, Miha Furlan, Mark W. Keller
A common observation in metal-based (specifically, those with AlOx tunnel junctions) single- electron tunneling (SET) devices is a time-dependent instability known as the long-term charge offset drift. This drift is not seen in Si-based devices. Our aim is

Correlation Between Microstructure, Electronic Properties and Ficker Noise in Organic Thin Film Transistors

March 31, 2008
Oana Jurchescu, Behrang H. Hamadani, Hao Xiong, Sungkyu Park, Sankar Subramanian, Neil M. Zimmerman, John E. Anthony, Thomas Jackson, David J. Gundlach
We report on observations of a direct correlation between the microstructure of the organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution

Lack of charge offset drift is a robust property of Si single electron transistors

February 12, 2008
Emmanouel S. Hourdakis, J A. Wahl, Neil M. Zimmerman
Single electron transistors (SETs) face several challenges before they can be considered technologically useful devices. One of them is the random, low frequency, charge offset drift that inhibits their use in parallel. Recently, tunable barrier Si SETs

Uncertainty budget for the NIST Electron Counting Capacitance Standard, ECCS- 1

November 21, 2007
Mark W. Keller, Neil M. Zimmerman, Ali L. Eichenberger
We measure a cryogenic, vacuum-gap capacitor by two methods: 1) charging it with a known number of electrons and measuring the resulting voltage, and 2) using a capacitance bridge traceable to the SI farad. We report a detailed uncertainty budget for the

Charge Offset Stability in Tunable-Barrier Si SET Devices

January 17, 2007
Neil M. Zimmerman, Brian Simonds, Mikio Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa
The problem of charge offset drift in single-electron tunneling devices, based on the Coulomb blockade, can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is

Electrical breakdown in the microscale: testing the standard theory

December 29, 2006
Emmanouel S. Hourdakis, Garnett W. Bryant, Neil M. Zimmerman
We present breakdown voltage measurement data in air taken with a technique we recently developed. The data suggests that below 10 ?m of electrode separation the dominant effect is field emission of electrons from the electrodes. Analyzing the data in that

An Upper Bound to the Frequency Dependence of the Cryogenic Vacuum-Gap Capacitor

September 6, 2006
Neil M. Zimmerman, Brian Simonds, Yicheng Wang
In attempting to develop a capacitance standard based on the charge of the electron, one question which has been open for many years is the frequency dependence of the vacuum-gap cryogenic capacitor. In this paper, we succeed in putting an upper bound on

Electrostatically gated Si devices: Coulomb blockade and barrier capacitance

August 10, 2006
Neil M. Zimmerman, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
Using a new device resembling a nano-CCD, and measuring the Coulomb blockade, we identify a new parameter, the "barrier capacitance". We then show how this parameter can be used to learn about the underlying shape of the energy barrier under a gate with a

Sub-micron gap capacitor for measurement of breakdown voltage in air

March 24, 2006
Emmanouel S. Hourdakis, Brian Simonds, Neil M. Zimmerman
We have developed a new method for measuring the value of breakdown voltage in air for electrode separations from 400 nm to 45 'm. The electrodes used were thin film Au lines evaporated on sapphire. The resulting capacitors had an area of 80 'm by 80 'm

Single electron tunnelling transistor with tunable barriers using silicon nanowire MOSFET

March 7, 2006
Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, Yasuo Takahashi, Neil M. Zimmerman, Stuart Martin
Single-electron tunnelling (SET) transistors1 are now of great and wide interest as basic elements for future applications such as low-power nanoelecronics2 and read-out electrometer for solid-state quantum computing3. Silicon SET devices4 have great

Silicon-Based Tunable-Barrier Single Charge Sources

June 27, 2004
Neil M. Zimmerman
We have demonstrated the operation of, and are assessing theoretically and experimentally the error rates of, silicon-based single-electron turnstiles, pumps, and CCDs. These devices are conceptually very similar to the metal-based single-electron pumps

Current quantization due to single-electron transfer in Si-wire charge-coupled devices

February 23, 2004
Akira Fujiwara, Neil M. Zimmerman, Yukinori Ono, Yasuo Takahashi
We observe a quantized current due to single-electron transfer in a small charge-coupled device, which consists of a narrow Si-wire channel with fine gates; the gate is used to form a tunable barrier potential. By modulating two barrier potentials under

Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

October 1, 2003
Yukinori Ono, Neil M. Zimmerman, Kenji Yamazaki, Yasuo Takahashi
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate controls independently the closing and opening of the channel acting as the SET lead, which enables single-electron transfer

Electrical metrology with single electrons

July 16, 2003
Neil M. Zimmerman, Mark W. Keller
This paper is mostly a review of the progress made at NIST in pursuing a capacitance standard based on the charge of the electron. We briefly introduce the Coulomb blockade, which is the basic physical phenomenon allowing control of single electrons