Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Dephasing of Si singlet-triplet qubits due to charge and spin defects

Published

Author(s)

Dimitrie Culcer, Neil M. Zimmerman

Abstract

We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates due to various classes of defects to experimentally measurable parameters such as charge dipole moment, spin dipole moment and fluctuator switching times. We find that charge fluctuators are more efficient in causing dephasing than spin fluctuators.
Citation
Applied Physics Letters

Keywords

quantum information, defects, spin qubit

Citation

Culcer, D. and Zimmerman, N. (2013), Dephasing of Si singlet-triplet qubits due to charge and spin defects, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913830 (Accessed August 9, 2022)
Created June 13, 2013, Updated October 12, 2021