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PUBLICATIONS

Charge Offset Stability in Si Single Electron Devices with Al Gates

Published

Author(s)

Neil M. Zimmerman, Henry Yang, Nai Shyan Lai, Wee Han Lim, Andrew S. Dzurak

Abstract

We report on the charge offset drift (time stability) in Si quantum dots defined with Al gates. The size of the charge offset drift (0.1 e) is intermediate between that of Al/AlO_x/Al tunnel junctions (greater than 1 e) and Si quantum dots defined with Si gates (0.01 e). This range of values suggests that defects in the AlO_x are the main cause of the charge offset drift instability.
Citation
Applied Physics Letters
Pub Type
Journals

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Keywords

Charge offset drift, single electron, Si, defects

Citation

Zimmerman, N. , Yang, H. , , N. , , W. and Dzurak, A. (2014), Charge Offset Stability in Si Single Electron Devices with Al Gates, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913831 (Accessed October 24, 2025)

Issues

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Created September 19, 2014, Updated August 15, 2018
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