Zimmerman, N.
, Yang, H.
, , N.
, , W.
and Dzurak, A.
(2014),
Charge Offset Stability in Si Single Electron Devices with Al Gates, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913831
(Accessed April 23, 2024)
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Charge Offset Stability in Si Single Electron Devices with Al Gates
Published
Author(s)
, Henry Yang, Nai Shyan Lai, Wee Han Lim, Andrew S. Dzurak
Abstract
We report on the charge offset drift (time stability) in Si quantum dots defined with Al gates. The size of the charge offset drift (0.1 e) is intermediate between that of Al/AlO_x/Al tunnel junctions (greater than 1 e) and Si quantum dots defined with Si gates (0.01 e). This range of values suggests that defects in the AlO_x are the main cause of the charge offset drift instability.Citation
Applied Physics Letters
Pub Type
Journals
Download Paper
Keywords
Charge offset drift, single electron, Si, defects
Citation
Created September 19, 2014, Updated August 15, 2018