Charge Offset Stability in Si Single Electron Devices with Al Gates
Neil M. Zimmerman, Henry Yang, Nai Shyan Lai, Wee Han Lim, Andrew S. Dzurak
We report on the charge offset drift (time stability) in Si quantum dots defined with Al gates. The size of the charge offset drift (0.1 e) is intermediate between that of Al/AlO_x/Al tunnel junctions (greater than 1 e) and Si quantum dots defined with Si gates (0.01 e). This range of values suggests that defects in the AlO_x are the main cause of the charge offset drift instability.
, Yang, H.
, , N.
, , W.
and Dzurak, A.
Charge Offset Stability in Si Single Electron Devices with Al Gates, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913831
(Accessed September 30, 2023)