A quantitative study of bias triangles under multiple biasing conditions presented in chemical potential space

Published

May 20, 2015

Author(s)

Justin K. Perron, Michael D. Stewart, Neil M. Zimmerman

Abstract

We present measurements of bias triangles in several biasing configurations. Using a capacitive model and two fit parameters we are able to predict the shapes and locations of the bias triangles in all measurement configurations. Furthermore, analysis of the data using this model allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demonstrations of Pauli-spin blockade where comparisons between different biasing directions are paramount. The long term stability of the CMOS compatible Si/SiO2 only architecture leads to the success of this analysis. We also propose a simple variation to this analysis that will extend its use to systems lacking the long term stability of these devices.

Citation

Journal of Physics-Condensed Matter

Pub Type

Journals

Download Paper

https://doi.org/10.1088/0953-8984/27/23/235302

Keywords

charge stability, double quantum dots, Silicon devices, coulomb blockade, bias triangles

Citation

Perron, J. , Stewart, M. and Zimmerman, N. (2015), A quantitative study of bias triangles under multiple biasing conditions presented in chemical potential space, Journal of Physics-Condensed Matter, [online], https://doi.org/10.1088/0953-8984/27/23/235302 (Accessed April 18, 2024)