Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

A quantitative study of bias triangles under multiple biasing conditions presented in chemical potential space

Published

Author(s)

Justin K. Perron, Michael D. Stewart, Neil M. Zimmerman

Abstract

We present measurements of bias triangles in several biasing configurations. Using a capacitive model and two fit parameters we are able to predict the shapes and locations of the bias triangles in all measurement configurations. Furthermore, analysis of the data using this model allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demonstrations of Pauli-spin blockade where comparisons between different biasing directions are paramount. The long term stability of the CMOS compatible Si/SiO2 only architecture leads to the success of this analysis. We also propose a simple variation to this analysis that will extend its use to systems lacking the long term stability of these devices.
Citation
Journal of Physics-Condensed Matter

Keywords

charge stability, double quantum dots, Silicon devices, coulomb blockade, bias triangles

Citation

Perron, J. , Stewart, M. and Zimmerman, N. (2015), A quantitative study of bias triangles under multiple biasing conditions presented in chemical potential space, Journal of Physics-Condensed Matter, [online], https://doi.org/10.1088/0953-8984/27/23/235302 (Accessed August 19, 2022)
Created May 20, 2015, Updated November 10, 2018