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Search Publications by: Thomas A. Germer (Fed)

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Displaying 51 - 75 of 384

Improved measurement capabilities at the NIST EUV Reflectometry Facility

August 1, 2014
Author(s)
Charles S. Tarrio, Steven E. Grantham, Thomas A. Germer, Jack C. Rife, Thomas B. Lucatorto, Mike Kriese, Yuriy Platonov, Licai Jiang, Jim Rodriguez
The NIST Extreme Ultraviolet (EUV) Reflectometry Facility was designed in the 1990s to accommodate the largest multilayer optics envisioned at that time. However, with increasing power requirements for an EUV scanner, source collection optics have grown

Angle-resolved diffuse reflectance and transmittance

July 1, 2014
Author(s)
Thomas A. Germer, J C. Stover, Sven Schroeder
This chapter will cover the topic of bidirectional reflectance distribution function [BRDF] measurements. These measurements, like the diffuse reflectance and transmittance measurements described in the previous chapter, cover the gamut from highly

Dispersive Methods

July 1, 2014
Author(s)
Arnold A. Gaertner, Howard Yoon, Thomas Germer
Chapter 3 will discuss dispersive means of obtaining spectral resolution in spectrophotometry. These methods are used to spatially disperse or separate the various wavelengths of optical electromagnetic radiation to enable analysis of material properties

Preface and Introduction

July 1, 2014
Author(s)
Thomas A. Germer, Joanne C. Zwinkels, Benjamin K. Tsai
This constitutes the front matter (preface and introductory chapter) to the book, "Spectrophotometry: Accurate Measurements of the Optical Properties of Materials," The introduction presents a short history of spectrophotometry. A very brief description of

Theoretical Concepts in Spectrophotometric Measurements

July 1, 2014
Author(s)
Thomas A. Germer, Joanne C. Zwinkels, Benjamin K. Tsai
This chapter will describe some of the theoretical concepts of obtaining optical properties from spectrophotometric measurements. The optical properties of interest can be the spectrophotometric quantities themselves or the calculated optical constants

Gaps Analysis for CD Metrology Beyond the 22 nm Node

April 10, 2013
Author(s)
Benjamin D. Bunday, Thomas Germer, Victor H. Vartanian, Aaron Cordes, Aron Cepler, Charles Settens
This paper will examine the future for critical dimension (CD) metrology. First we will present the extensive list of applications for which CD metrology solutions are needed, showing commonalities and differences among the various applications. We will

Intercomparison between optical and x-ray scatterometry measurements of FinFET structures

April 8, 2013
Author(s)
Paul Lemaillet, Thomas Germer, Regis J. Kline, Daniel Sunday, Chengqing C. Wang, Wen-Li Wu
In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopic