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Gaps Analysis for CD Metrology Beyond the 22 nm Node

Published

Author(s)

Benjamin D. Bunday, Thomas Germer, Victor H. Vartanian, Aaron Cordes, Aron Cepler, Charles Settens

Abstract

This paper will examine the future for critical dimension (CD) metrology. First we will present the extensive list of applications for which CD metrology solutions are needed, showing commonalities and differences among the various applications. We will then report on the expected technical limits of the metrology solutions currently being investigated by SEMATECH and others in the industry to address the metrology challenges of future nodes, including conventional CD scanning electron microscopy (CD-SEM) and optical critical dimension (OCD) metrology and new potential solutions such as He-ion microscopy (HeIM), CD atomic force microscopy (CD-AFM), CD small-angle x-ray scattering (CD-SAXS), high voltage scanning electron microscopy (HV-SEM), and other variants. A technical gap analysis matrix will then be demonstrated, showing the current state of understanding of the future of the CD metrology space.
Proceedings Title
Metrology, Inspection, and Process Control for Microlithography XXVII
Volume
8681
Conference Dates
February 24-28, 2013
Conference Location
San Jose, CA, US

Keywords

Critical dimension, gaps analysis, metrology, OCD, CD-SEM, CD, CD-SAXS, scatterometry, FinFET, HAR

Citation

Bunday, B. , Germer, T. , Vartanian, V. , Cordes, A. , Cepler, A. and Settens, C. (2013), Gaps Analysis for CD Metrology Beyond the 22 nm Node, Metrology, Inspection, and Process Control for Microlithography XXVII, San Jose, CA, US, [online], https://doi.org/10.1117/12.2012472 (Accessed July 21, 2024)

Issues

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Created April 9, 2013, Updated October 12, 2021