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Displaying 151 - 175 of 221

Bevel Depth Profiling SIMS for Analysis of Layer Structures

September 1, 2003
Author(s)
John G. Gillen, Scott A. Wight, P Chi, Albert J. Fahey, Jennifer R. Verkouteren, Eric S. Windsor, D. B. Fenner
We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this procedure, a sub-degree angle bevel is cut into the analytical sample with an oxygen or cesium

Secondary Ion Mass Spectrometry Using Cluster Primary Ion Beams

January 1, 2003
Author(s)
John G. Gillen, Albert J. Fahey
At the National Institute of Standards and Technology (NIST) we have a capability for conducting cluster SIMS experiments on both our ion microscope and TOF-SIMS instruments. This paper will review our recent work on cluster ion source development

Copper Oxide Precipitates in NBS Standard Reference Material 482

December 1, 2002
Author(s)
Eric S. Windsor, R Carlton, John G. Gillen, Scott A. Wight, David S. Bright
Copper oxide has been detected in the copper containing alloys of Standard Reference Material (SRM) 482. This occurrence is significant because it represents heterogeneity within a standard reference material that was certified to be homogeneous on a

Sol-Gel Materials for Gas Phase Sensing Using Microhotplate Arrays

February 1, 2002
Author(s)
N O. Savage, Richard E. Cavicchi, Michael J. Tarlov, Stephen Semancik, J Greg Gillen
Sol-gel chemistry is used to create suspensions (sols) of small particles of materials such as metal oxides. These suspensions can be dried to a gel or powder or used in the sol form for coatings and thin films. One promising application of sol-gel derived

Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization

January 1, 2001
Author(s)
John G. Gillen, S V. Roberson, Albert J. Fahey, Marlon L. Walker, J Bennett, R Lareau
We are evaluating the use of polyatomic and cluster primary ion beams for characterization of semiconductor materials by secondary ion mass spectrometry using both magnetic sector and time-of-flight SIMS instruments. Primary ion beams of SF 5+, C 8- and

High Temperature Materials for Thin-Film Thermocouples on Silicon Wafers

November 1, 2000
Author(s)
Kenneth G. Kreider, John G. Gillen
We Have developed an instrumented calibration wafer for radiometric temperature measurements in rapid thermal processing (RPT) tools for semiconductor processing. The instrumented wafers have sputter deposited thin-film thermocouples to minimize the