Secondary Ion Mass Spectrometry Using Cluster Primary Ion Beams
John G. Gillen, Albert J. Fahey
At the National Institute of Standards and Technology (NIST) we have a capability for conducting cluster SIMS experiments on both our ion microscope and TOF-SIMS instruments. This paper will review our recent work on cluster ion source development, elemental depth profiling with cluster primary ion beams and the use of cluster ion beams for organic surface characterization. An area of particular interest is the observation that beam-induced damage for some organic materials is substantially reduced under cluster bombardment. This unique feature of cluster SIMS is being utilized for molecular depth profiling of selected polymer films and for studying the spatial distribution of high explosive particles by SIMS imaging. We also describe recent studies that may provide additional insight into possible mechanisms for the molecular secondary ion yield enhancement observed for organic thin films under cluster bombardment.
Applied Surface Science
cluster bombardment, depth profile, secondary ion mass spectrometry, surface analysis