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Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization

Published

Author(s)

John G. Gillen, S V. Roberson, Albert J. Fahey, Marlon L. Walker, J Bennett, R Lareau

Abstract

We are evaluating the use of polyatomic and cluster primary ion beams for characterization of semiconductor materials by secondary ion mass spectrometry using both magnetic sector and time-of-flight SIMS instruments. Primary ion beams of SF5+, C8- and CsC6- have been used to analyze low energy arsenic implants in silicon, boron delta-doped structures, thin gate oxides, metal multilayers, organic surface contamination and photoresist thin films. Compared to monoatomic bombardment under the same conditions, cluster ion beams offer improved depth resolution for silicon depth profiling and a reduction in sputter-induced topography for metals. For organic materials, the use of a cluster ion beam can give large improvements in yield for characteristic secondary ions and can minimize beam-induced degradation in some materials.
Proceedings Title
Characterization and Metrology for ULSI Technology 2000, International Conference | | Characterization and Metrology for ULSI Technology |AIP
Volume
550
Conference Dates
June 1, 2000
Conference Location
backfill
Conference Title
AIP Conference Proceedings

Keywords

cluster, depth profile, gate oxide, organic surface, SIMS, ultrashallow

Citation

Gillen, J. , Roberson, S. , Fahey, A. , Walker, M. , Bennett, J. and Lareau, R. (2001), Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization, Characterization and Metrology for ULSI Technology 2000, International Conference | | Characterization and Metrology for ULSI Technology |AIP, backfill, -1 (Accessed June 17, 2024)

Issues

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Created January 1, 2001, Updated February 19, 2017