Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization

Published

January 1, 2001

Author(s)

John G. Gillen, S V. Roberson, Albert J. Fahey, Marlon L. Walker, J Bennett, R Lareau

Abstract

We are evaluating the use of polyatomic and cluster primary ion beams for characterization of semiconductor materials by secondary ion mass spectrometry using both magnetic sector and time-of-flight SIMS instruments. Primary ion beams of SF₅+, C₈- and CsC₆- have been used to analyze low energy arsenic implants in silicon, boron delta-doped structures, thin gate oxides, metal multilayers, organic surface contamination and photoresist thin films. Compared to monoatomic bombardment under the same conditions, cluster ion beams offer improved depth resolution for silicon depth profiling and a reduction in sputter-induced topography for metals. For organic materials, the use of a cluster ion beam can give large improvements in yield for characteristic secondary ions and can minimize beam-induced degradation in some materials.

Proceedings Title

Characterization and Metrology for ULSI Technology 2000, International Conference | | Characterization and Metrology for ULSI Technology |AIP

Volume

550

Conference Dates

June 1, 2000

Conference Location

backfill

Conference Title

AIP Conference Proceedings

Pub Type

Conferences

Keywords

cluster, depth profile, gate oxide, organic surface, SIMS, ultrashallow

Citation

Gillen, J. , Roberson, S. , Fahey, A. , Walker, M. , Bennett, J. and Lareau, R. (2001), Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization, Characterization and Metrology for ULSI Technology 2000, International Conference | | Characterization and Metrology for ULSI Technology |AIP, backfill, -1 (Accessed October 3, 2025)