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Displaying 2001 - 2025 of 2183

Modeling Spatial Reasoning Systems With Shape Algebras and Formal Logic

June 1, 1996
Author(s)
Scott Chase
The combination of the paradigms of shape algebras and predicate logic representations,used in a new method for describing designs, is presented. First order predicate logicprovides a natural, intuitive way of representing shapes and spatial relations

Calibration of Scanning Electron Microscope Magnification Standards SRM-484

May 1, 1996
Author(s)
Joseph Fu, Theodore V. Vorburger, D Ballard
Standard Reference Material (SRM) 484 is an artifact for calibrating the magnification scale of a scanning electron microscope. Since 1977 the National Institute of Standards and Technology (NIST) has produced seven issues of SRM484 amounting to

Electrical Test Structures Replicated in Silicon-On-Insulator Material

May 1, 1996
Author(s)
Michael W. Cresswell, J Sniegowski, Rathindra Ghoshtagore, Robert Allen, L Linholm, John S. Villarrubia
Measurements of the linewidths of submicrometer features made by different metrology techniques have frequently been characterized by differences of up to 90 nm. The purpose of the work reported here is to address the special difficulties that this

High Accuracy Overlay Measurements

May 1, 1996
Author(s)
Richard M. Silver, James E. Potzick, Fredric Scire, Robert D. Larrabee
The reduced critical dimensions of semiconductor devices place more stringent requirements on the precision and accuracy of overlay metrology tools used to monitor stepper feature placement. The use of mix and match stepper techniques and step and scan

High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope

May 1, 1996
Author(s)
J R. Lowney, Andras Vladar, Michael T. Postek
Two Monte Carlo computer codes have been written to simulate the transmitted-, backscattered-, and secondary-electron signals from targets in a scanning electron microscope. The first discussed, MONSEL-II, is applied to semi-infinite lines produced

Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology

May 1, 1996
Author(s)
Ronald G. Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but also

New Algorithm for the Measurement of Pitch in Metrology Instruments

May 1, 1996
Author(s)
Nien F. Zhang, Michael T. Postek, Robert D. Larrabee, L Carroll, William J. Keery
Traditionally, the measurement of pitch in metrology instruments is thought to be a benign self-compensating function. However, as the measurement uncertainty of metrology instruments is pushed to the nanometer level, evaluation of the performance of the

SEM Performance Evaluation Using the Sharpness Criterion

May 1, 1996
Author(s)
Michael T. Postek, Andras Vladar
Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or

Models for Relating Scanning Electron Microscopy Images to Measured Artifacts

April 1, 1996
Author(s)
Michael T. Postek, Andras Vladar, J R. Lowney
A specific example of a technique we developed to enhance the information obtained from SEM images is the extraction of an approximate profile corresponding to an electron beam with zero beam diameter from one with a finite beam diameter. Results were

Test Optics Error Removal

March 1, 1996
Author(s)
Christopher J. Evans, R Kestner
Wave-front or surface errors may be divided into rotationally symmetric and nonrotationally symmetric terms. It is shown that if either the test part or the reference surface in an interferometric test is rotated to N equally spaced positions about the

Chemical Aspects of Tool Wear in Single Point Diamond Turning

January 1, 1996
Author(s)
E W. Paul, Christopher J. Evans, A Mangamelli, Michael L. McGlauflin, Robert S. Polvani
A hypothesis is proposed that ascribes chemical wear of diamond tools to the presence of unpaired d electrons in the sample being machined. This hypothesis is used to explain a range of results for metals, alloys, and other materials including electroless

Digital Imaging for Scanning Electron Microscopy

January 1, 1996
Author(s)
Michael T. Postek, Andras Vladar
The development and application of digital imaging technology has been one of the major advancements in scanning electron microscopy (SEM) during the past several years. This digital revolution has been brought about by significant progress in

Energy-pooling collisions in cesium: 6P/sub J/+6P/sub J/ to 6S+(nl=7P,6D,8S,4F)

January 1, 1996
Author(s)
Zeina J. Kubarych, S Milosevic, A Allegrini, J Huennekens, R K. Namiotka
We report experimental rate coefficients for the energy-pooling collisions Cs(6P/sub 1/2/)+Cs(6P/sub 1/2/) to Cs(6S/sub 1/2/)+Cs(nl/sub J''/) and Cs(6P/sub 3/2/)+Cs(6P/sub 3/2/) to Cs(6S/sub 1/2/)+Cs(nl/sub J''/) where nl/sub J''/=7P/sub 1/2/, 7P/sub 3/2/

Fabry-Perot Interferometers for Small Displacement Measurements

January 1, 1996
Author(s)
Lowell P. Howard, Fredric Scire, Jack A. Stone Jr.
A description of a Fabry-Perot interferometer for measuring small displacements is given. The instruments consists of a fiber-optic-coupled actuator and mirror guiding mechanisms, a tunable diode laser for tracking the changes in cavity length and a

Height Calibration of Atomic Force Microscopes Using Silicon Atomic Step Artifacts

January 1, 1996
Author(s)
V W. Tsai, Theodore V. Vorburger, P Sullivan, Ronald G. Dixson, Richard M. Silver, Edwin R. Williams, J Schneir
The decreasing feature dimensions required in the semiconductor manufacturing industry are placing ever increasing demands upon metrology instruments. Atomic force microscopes (AFMs), which can have 1 nm lateral resolution and sub-angstrom vertical

Integral Equation for Scattering by a Rough Surface

January 1, 1996
Author(s)
Egon Marx
An equation for an unknown surface field that represents scattering by a rough patch on a flat dielectric surface is presented. The geometrical considerations for this particular problem are discussed, especially in relation to a surface divergence factor.

Laser focusing of atoms for nanostructure fabrication

January 1, 1996
Author(s)
J Mcclelland, Robert Celotta, Zeina J. Kubarych, R Gupta
Laser focusing of atoms has emerged as a viable form of nanofabrication. Structures are formed by focusing chromium atoms as they deposit onto a surface. The focusing occurs in a standing-wave laser field in one or two dimensions, resulting in arrays

New NIST-Certified Length Microscale

January 1, 1996
Author(s)
James E. Potzick
The National Institute of Standards and Technology is developing a simple one-dimension certified pitch standard (or scale) covering the range 1 um to 10 mm, intended for the calibration of microscope magnification and dimensional metrology instrument

Novel Methods for Length Measurement Employing Diode Lasers

January 1, 1996
Author(s)
Jack A. Stone Jr., Lowell P. Howard, Alois Stejskal, M Stephens, C Oates, L Hollberg
Diode lasers have several unique capabilities for length-measurement applications, arising from properties of the diodes that are much different from those of the venerable helium-neon laser presently used for most interferometric measurements. For example
Displaying 2001 - 2025 of 2183
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