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Search Publications

NIST Authors in Bold

Displaying 1676 - 1700 of 2174

Critical Dimension Metrology and the Scanning Electron Microscope

December 1, 2001
Author(s)
Michael T. Postek, Andras Vladar
Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning electron

Nanomachining of Si with Si3N4 Masks Patterned by Scanning

November 1, 2001
Author(s)
F S. Chien, John A. Dagata, W F. Hsieh, S Gwo
We demonstrate that local oxidation of silicon nitride films deposited on conductive substrates with a conductive-probe atomic force microscope (AFM) is a very promising approach for nanofabrication. Scanning Auger microscopy and spectroscopy are employed

Trial Shape-Sensitive Linewidth Measurement System

November 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in

Accuracy and Versatility of the NIST M48 Coordinate Measuring Machine

October 1, 2001
Author(s)
John R. Stoup, Theodore D. Doiron
The NIST Is continuing to develop the ability to perform accurate, traceable measurements on a wide range of artifacts using a very precise, error-mapped coordinate measuring machine (CMM). The NIST M48 CMM has promised accuracy and versatility for many

Some Developments at NIST on Traceability in Dimensional Measurements

October 1, 2001
Author(s)
Dennis A. Swyt, Steven D. Phillips, J Palmateer
This paper reports to the international community on recent developments in technical ;policies, programs, and capabilities at the U.S. National Institute of Standards and Technology (NIST) related to traceability in dimensional measurements. These

NIST-ASME Workshop on Uncertainty in Dimensional Measurements

September 1, 2001
Author(s)
Dennis A. Swyt
A 2 1/2-day workshop on problems in use of uncertainty in dimensional measurements sponsored by NIST and ASME was held June 5-7, 2001, at NIST in Gaithersburg, MD. The workshop was attended by fifty-six representatives of organizations including

NISURF-II, An Upgraded Surface Measuring Facility

September 1, 2001
Author(s)
S Z. Zahwi, M F. Koura, Thomas Brian Renegar, A M. Mekawi
During 1982-1985, a cooperative project was made between the National Bureau of Standards (NBS) at that time (now National Institute of Standards and Technology (NIST - USA)) and the National Institute for Standards (NIS - Egypt) to establish a

Active Monitoring and Control of Electron-Beam-Induced Contaminaition

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, R Vane
The vacuum system of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of these

Active Monitoring and Control of Electron-Beam-Induced Contamination

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, R Vane
The vacuum systems of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of these

Comparison of Edge Detection Methods Using a Prototype Overlay Calibration Artifact

August 1, 2001
Author(s)
Richard M. Silver, Jay S. Jun, Edward A. Kornegay, R Morton
Accurate overlay measurements rely on robust, repeatable, and accurate feature position determination. In our effort to develop traceable we have examined a number of and the parameters which affect those measurements. The samples used in this study are a

Edge Determination for Polycrystalline Silicon Lines on Gate Oxide

August 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek
In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges arc characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal within

Electric Force Microscopy with a Single Carbon Nanotube Tip

August 1, 2001
Author(s)
John A. Dagata, F S. Chien, S Gwo, K Morimoto, T Inoue, J Itoh, H Yokoyama
Carbon nanotube tips offer a significant improvement over standard scanned probe microscope (SPM) tips for electrical characterization of nanodevice structures. Carbon nanotube tips are compatible with requirements for integrated SPM probe station

Problem with Submicrometer-linewidth Standards and A Possible Solution

August 1, 2001
Author(s)
James E. Potzick
Traceable linewidth measurements of tiny features on photomasks and wafers present interesting challenges. Usually technical solutions exist for the problems encountered, but traceability can be costly in time and labor. A measurement is useful only if its

Problem With Submicrometer-Linewidth Standards and a Proposed Solution

August 1, 2001
Author(s)
James E. Potzick
Traceable linewidth measurements of tiny features on photomasks and wafers present interesting challenges. Usually technical solutions exist for the problems encountered, but traceability can be costly in time and labor. A measurement is useful only if its

Reference Material 8091: New Scanning Electron Microscope Sharpness Standard

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, Nien F. Zhang, Robert D. Larrabee, Samuel N. Jones, Russell E. Hajdaj
All scanning electron microscope-based inspection instruments, whether they are in a laboratory or on the production line, slowly lose their performance and then the instrument is no longer capable of providing as good quality, sharp images as before. This

Reference Material 8091: New Scanning Electron Microscope Sharpness Standard

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, Nien F. Zhang, Robert D. Larrabee, Samuel N. Jones, Russell E. Hajdaj
Reference Material (RM 8091) is intended primarily for use in checking the sharpness performance of scanning electron microscopes. It is supplied as a small, approximately 2 mm x 2 mm diced semiconductor chip. This sample is capable of being mounted

SEM Sentinel-SEM Performance Measurement System

August 1, 2001
Author(s)
Bradley N. Damazo, Andras Vladar, Alice V. Ling, Alkan Donmez, Michael T. Postek, Crossley E. Jayewardene
This paper describes the design and implementation of a system for monitoring the performance of a critical dimension measurement scanning electron microscope (CD-SEM). Experiments were performed for tests involving diagnosis of the vacuum system and

Silicon Single Atom Steps as AFM Height Standards

August 1, 2001
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, V W. Tsai, E. C. Williams, Theodore V. Vorburger, H Edwards, D Cook, P West, R Nyffenegger
Atomic force microscopes (AFMs) are used in the semiconductor industry for a variety of metrology purposes. Step height measurements at the nanometer level and roughness measurements at sub-nanometer levels are often of interest. To perform accurate

FEA Modeling and Hardness Performance Prediction of Rockwell Diamond Indenters

July 1, 2001
Author(s)
Hui Zhou, Jun-Feng Song, Samuel Low, Li Ma
The difficulty in manufacturing Rockwell diamond indenters to the required geometric specifications has resulted in most commercially manufactured indenters to vary in shape from one indenter to another. This difference in shape is thought to be a major

Single-Integral-Equation Method for Scattering by Dielectric Cylinders

July 1, 2001
Author(s)
Egon Marx
Electromagnetic scattering of an incident plane monochromatic wave by dielectric or finitely conducting infinite cylinders of arbitrary shape, possibly in the presence of a substrate, can be reduced to the solution of scalar Helmholtz equations in two

Single-Integral-Equation Method for Three-Dimensional Scattering

July 1, 2001
Author(s)
Egon Marx
The fields scattered by a homogeneous dielectric or finitely conducting object can be obtained from two tangential vector fields, the components of the electric and magnetic fields, on the interface. We have adapted the single-integral-equation method for
Displaying 1676 - 1700 of 2174
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