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Displaying 13176 - 13200 of 73927

3D Nanometrology Based on SEM Stereophotogrammetry

September 18, 2017
Author(s)
Vipin N. Tondare, John S. Villarrubia, Andras Vladar
Three-dimensional (3D) reconstruction of a sample surface from scanning electron microscope (SEM) images taken at two perspectives has been known for decades. However, this method has not been widely used in the semiconductor industry for 3D measurements

Analytical Methods and Development of Reference Materials for Toxic Metals and Metal Species in Food and Dietary Supplements

September 18, 2017
Author(s)
Stephen E. Long, Michael B. Ellisor, Frances Nilsen, Laura J. Wood, Karen E. Murphy, Lee L. Yu
Highly toxic metals such as arsenic, cadmium, lead and mercury are prevalent in the terrestrial and marine environments from both natural sources and anthropogenic activities. Contamination of food can often occur during agricultural production and food

Bound Electron Nonlinearity Beyond the Ionization Threshold

September 18, 2017
Author(s)
Jared K. Wahlstrand, Sina Zahedpour, H M. Milchberg
Using supercontinuum spectral interferometry, we measure the ionization induced optical phase shift in three noble gases and nitrogen and oxygen. Results largely support the standard model of filamentation.

Trichothiazole A, a dichlorinated polyketide featuring an embedded thiazole isolated from Trichodesmium thiebautii blooms

September 18, 2017
Author(s)
Tracey B. Schock, Peter D. Moeller, Rick Belisle, Christopher W. Via, Tracy A. Villareal, Kevin Beauchesne, Matthew J. Bertin, Paul Zimba
Mass spectrometry-guided isolation of the lipophilic extract of Trichodesmium thiebautii bloom material led to the isolation and structure characterization of a new thiazole-containing di-chlorinated polyketide (1). The structure of 1 was deduced using 1D

Chapter 10. Measurement of active nanoelectronic devices

September 17, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
Many of the most promising applications of nanomaterials involve active, nanoelectronic devices. For example, the intrinsic transport properties of single-walled, carbon nanotubes (CNTs) enable field effect transistors (FETs) that allow higher current

Chapter 11. Dopant profiling in semiconductor nanoelectronics

September 17, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
As nanoelectronic device dimensions are scaled down to atomic sizes, device performance becomes more and more sensitive to the exact arrangement of atoms, including individual dopants and defects, within the device. Thus, there is ongoing demand for

Chapter 12 Depth profiling

September 17, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
Microwave tomography is an active, developing research area. The objective is to visualize hidden, subsurface features through application of microwave radiation. Applications include ground penetrating radars (GPR) [1], defect spectroscopy in materials

Chapter 13. Dynamics of nanoscale magnetic systems

September 17, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
The topic of nanoscale magnetic systems is broad and could easily provide enough material for an entire book on its own. In this chapter, as in previous ones, we will focus on the nanoscale magnetic systems for which near-field scanning microwave

Chapter 6. Characterization of nanofiber devices

September 17, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
Previous chapters have introduced and described a variety of measurement techniques for RF nanoelectronic devices. Here, our objective is to work through an illustrative example that highlights strategies and challenges related to implementing a specific

Chapter 7. Probe-based measurement systems

September 17, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
In the preceding chapters, we have focused on broadband, calibrated measurements of nanoelectronic devices. In particular, we have described measurement techniques for the measurement of calibrated, complex scattering parameters and the subsequent

Chapter 8. Instrumentation for near-field scanning microwave microscopy

September 17, 2017
Author(s)
Pavel Kabos, Thomas Mitchell (Mitch) Wallis
In the previous chapter, we discussed the underlying physics and theory of operation for near-field scanning microwave microscopes (NSMMs) and related probe-based measurement systems. Here, we consider the practical implementations of such scanning probe

Chapter 9. Radio frequency scanning probe measurements of materials

September 17, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
Preceding chapters have described the near field scanning microwave microscope (NSMM), while discussing both the underlying theory of operation and practical considerations for instrumentation. A primary application area for NSMMs and related microscopes

Chapter 1. An introduction to radio frequency nanoelectronics

September 15, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
The field of radio frequency (RF) nanoelectronics focuses on the fundamental study and engineering of devices that are enabled by nanotechnology and operate within a frequency range from about 100 MHz to about 100 GHz. This range includes frequencies

Chapter 2. Core concepts of microwave and RF measurements

September 15, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
In this chapter we will review the core concepts of microwave and radio frequency (RF) propagation in both guided-wave and on-wafer environments. Because most of these concepts are well-known, we will introduce only the terms and definitions that are

Chapter 3. Extreme Impedance Measurements

September 15, 2017
Author(s)
Pavel Kabos, Thomas Mitchell (Mitch) Wallis
Microwave measurements of RF nanoelectronic devices present numerous challenges. Among these, perhaps the most difficult measurement challenge arises from the inherent, often extreme impedance mismatch between nanolectronic systems and conventional

Chapter 4. On-wafer measurements of RF nanoelectronic devices

September 15, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
The preceding chapters have introduced the core concepts and techniques of microwave measurements, in general, and techniques for microwave measurements of extreme impedance devices, in particular. Here, we narrow the focus further to on-wafer, microwave

Chapter 5. Modeling and validation of RF nanoelectronic devices

September 15, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
The development and engineering of nanoelectronic devices has been characterized by several significant technological trends. In addition to the ongoing scaling of feature sizes down to nanoscale dimensions, the need for superior performance has driven the

Polymer Informatics: Opportunities and Challenges

September 15, 2017
Author(s)
Debra J. Audus, Juan J. de Pablo
We are entering an era where large volumes of scientific data, coupled with algorithmic and computational advances, can reduce both the time and cost of developing new materials. This emerging field known as materials informatics has gained acceptance for
Displaying 13176 - 13200 of 73927
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