Local field effect on charge-capture/emission dynamics

Published: October 30, 2017

Author(s)

Kin P. Cheung, Dmitry Veksler, Jason P. Campbell

Abstract

Charge-capture/emission is ubiquitous in solid state devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this basic process is found in many text books and is considered well understood. As in many solid state devices models, the individuality of immobile charge is commonly replaced with the average quantity of charge density. This has worked remarkably well when large numbers of individual charges (ensemble) are involved. As device geometries become very small, the ensemble “averaging” becomes far less accurate. In this work, the charge-capture/emission dynamic is re-examined with full consideration of individual charges and the local field in their immediate vicinity. As an example, this new picture is applied to the random telegraph noise (RTN) phenomenon in Metal- Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). When the screening of a trapped charge by a polar medium such as SiO2 is quantitatively accounted for in this local field picture, a new physically sound RTN emission mechanism emerges. Similarly, the dynamics of post-stress recovery of Negative-Bias-Instability of p-channel MOSFET can be more easily explained.
Citation: IEEE Transactions on Electron Devices
Pub Type: Journals

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Keywords

Charge, local field, defect, capture, emission, dynamics, device
Created October 30, 2017, Updated December 11, 2017