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Displaying 1051 - 1075 of 1954

Comparative Thickness Measurements of SiO 2 /Si Films for Thickness Less than 10 nm

January 1, 2004
Author(s)
Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter
We report on a comparative measurement of SiO 2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were

Improving the Sensitivity of Electron Beam Microanalytical Techniques by Enhanced X-Ray Spectrometry: X-Ray Microcalorimetry, Silicon Drift Detector Energy Dispersive X-ray Spectrometry, and Polycapillary X-ray Optics

December 25, 2003
Author(s)
Dale E. Newbury
The microcalorimeter energy dispersive x-ray spectrometer, the silicon drift detector (SDD), and polycapillary x-ray optics are recent developments that have significantly advanced analytical x-ray spectrometry for electron beam instruments. The

Selective DNA Sensing Elements Integrated Into Microfluidic Channels

December 1, 2003
Author(s)
Rebecca A. Zangmeister, Michael J. Tarlov
This paper describes the development of a unique fluorescence based DNA diagnostic assay that does not require pre-labeling of the target oligomer prior to analysis. The assay uses polyacrylamide hydrogel plugs immobilized in microfluidic channels, and is

Bevel Depth Profiling SIMS for Analysis of Layer Structures

September 1, 2003
Author(s)
John G. Gillen, Scott A. Wight, P Chi, Albert J. Fahey, Jennifer R. Verkouteren, Eric S. Windsor, D. B. Fenner
We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this procedure, a sub-degree angle bevel is cut into the analytical sample with an oxygen or cesium

Measurement of Gate-Oxide Film Thickness by X-ray Photoelectron Spectroscopy

September 1, 2003
Author(s)
Cedric J. Powell, Aleksander Jablonski
X-Ray Photoelectron Spectroscopy (XPS) is being used to an increasing extent for the characterization of new gate-oxide materials, particularly for the determination of film composition, uniformity, and thickness. A key parameter for film-thickness

Temperature Metrology and Its Impact on Industry

September 1, 2003
Author(s)
Hratch G. Semerjian, Ellyn S. Beary
Temperature measurement represents one of the most frequently and broadly used measurements, with a majority of products manufactured having temperature measurement devices as an esential component. The accuracy and precision of these temperature
Displaying 1051 - 1075 of 1954
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