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Comparative Thickness Measurements of SiO2/Si Films for Thickness Less than 10 nm



Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter


We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were characterized by XPS with grazing incidence x-rays at 1.8 keV, with cold neutron reflectometry (λ I = 0.475 nm), and with spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and the grazing incidence XPS, with slightly lower values for the neutron reflectometry. The effects of surface contamination are discussed.
Surface and Interface Analysis
No. 1


ellipsometry, GIXPS, grazing angles, neutron reflectometry, neutrons, reflectometry, silicon, silicon dioxide, x-rays


Jach, T. , Dura, J. , Nguyen, N. , Swider, J. , Cappello, G. and Richter, C. (2004), Comparative Thickness Measurements of SiO<sub>2</sub>/Si Films for Thickness Less than 10 nm, Surface and Interface Analysis (Accessed June 16, 2024)


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Created January 1, 2004, Updated February 19, 2017