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Comparative Thickness Measurements of SiO2/Si Films for Thickness Less than 10 nm

Published

Author(s)

Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter

Abstract

We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were characterized by XPS with grazing incidence x-rays at 1.8 keV, with cold neutron reflectometry (λ I = 0.475 nm), and with spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and the grazing incidence XPS, with slightly lower values for the neutron reflectometry. The effects of surface contamination are discussed.
Citation
Surface and Interface Analysis
Volume
36
Issue
No. 1

Keywords

ellipsometry, GIXPS, grazing angles, neutron reflectometry, neutrons, reflectometry, silicon, silicon dioxide, x-rays

Citation

Jach, T. , Dura, J. , Nguyen, N. , Swider, J. , Cappello, G. and Richter, C. (2004), Comparative Thickness Measurements of SiO<sub>2</sub>/Si Films for Thickness Less than 10 nm, Surface and Interface Analysis (Accessed August 9, 2022)
Created January 1, 2004, Updated February 19, 2017