Comparative Thickness Measurements of SiO2/Si Films for Thickness Less than 10 nm
Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter
We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were characterized by XPS with grazing incidence x-rays at 1.8 keV, with cold neutron reflectometry (λ I = 0.475 nm), and with spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and the grazing incidence XPS, with slightly lower values for the neutron reflectometry. The effects of surface contamination are discussed.
, Dura, J.
, Nguyen, N.
, Swider, J.
, Cappello, G.
and Richter, C.
Comparative Thickness Measurements of SiO<sub>2</sub>/Si Films for Thickness Less than 10 nm, Surface and Interface Analysis
(Accessed August 9, 2022)