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Instability of Flatband Voltage in HfO2 Gate Stack Structures under Reducing/Oxidizing Annealing Conditions

August 13, 2007
Author(s)
K Ohmori, P Ahmet, M Yoshitake, T Chikyow, K Shiraishi, K Yamabe, H Watanabe, Y Akasaka, Kao-Shuo Chang, Martin L. Green, K Yamada
We have applied a combinatorial approach to fabricate work function (WF) tuned Pt-W alloy films and used the films as metal electrodes for HfO2/SiO2/Si capacitors. As the ratio RPt of Pt to W changes from 0 to 1, the WF value varies continuously from 4.7
Displaying 976 - 1000 of 2634
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