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Displaying 676 - 700 of 1322

Strain Relaxation in Patterned Strained Silicon Directly on Insulator Structures

December 19, 2005
Author(s)
R Z. Lei, W Tsai, I Aberg, T B. O'Reilly, J L. Hoyt, D A. Antoniadis, H I. Smith, Albert J. Paul, Martin L. Green, J Li, R Hull
Strain relaxation is studied in Strained Silicon Directly on Insulator (SSDOI) substrates patterned with nano-scale features. Using interference lithography, biaxially-strained SSDOI substrates with 30 nm-thick strained Si on insulator films were patterned

Report of the Working Group on Crystal Phase Identifiers 2005-3-21

November 20, 2005
Author(s)
David R Brown, Sidney Abrahams, Michael Berndt, John Faber, Vicky L. Karen, Sam Motherwell, Jean-Claude Toledano, Pierre Villars, John Westbrook, Brian McMahon
The International Union of Pure and Applied Chemistry (IUPAC) has been examining standards for the electronic representation of chemical information, and as part of this effort it has established a working group in conjunction with the USA National

Characterization of Atomic Layer Deposition Using X-Ray Reflectrometry

November 13, 2005
Author(s)
Donald A. Windover, N G. Armstrong, James P. Cline, P Y. Hung, A C. Diebold
This work addresses current limitations of X-ray reflectometry (XRR) for modeling thin films and provides a basis for their improvement. Better accuracy in the characterization of novel thin film structures requires better model selection techniques and

Composition and Carrier Concentration Dependence of the Electronic Structure of InyGa1-yAs1-xNx Films With Nitrogen Mole Fraction Less Than 0.012

November 1, 2005
Author(s)
Youn S. Kang, Lawrence H. Robins, Anthony Birdwell, Alexander J. Shapiro, W. R. Thurber, Mark D. Vaudin, M M. Fahmi, D Bryson, S N. Mohammad
The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown bynitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance PR spectroscopy at temperatures between 20 and 300 K. The films were approximately 0.5

Fracture Strength of Silicon Carbide Microspecimens

October 1, 2005
Author(s)
W N. Sharpe, O Jadaan, G M. Beheim, George D. Quinn, N N. Nemeth
Micro silicon carbide tension specimen were prepared with straight, curved, and notched gage lengths. These were tested to failure and the strengths analyzed by Weibull statistics. Fractographic analysis confirmed that strength limiting flaws were etch
Displaying 676 - 700 of 1322
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