An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Characterization of Atomic Layer Deposition Using X-Ray Reflectrometry
Published
Author(s)
Donald A. Windover, N G. Armstrong, James P. Cline, P Y. Hung, A C. Diebold
Abstract
This work addresses current limitations of X-ray reflectometry (XRR) for modeling thin films and provides a basis for their improvement. Better accuracy in the characterization of novel thin film structures requires better model selection techniques and better knowledge of the theorectical limitiations of current XRR analysis techniques. We use hafnium dioxide (HfO2) nanoscale (>>1nm) thin films deposited by atomic layer deposition (ALD) to study the limitations of current techniques. These structures are of strategic importance as CMOS gate and barrier materials. We show that XRR modeling-for our measured data range and counting statistics-will fail for thickness less than 1 nm. We also show that a 2-layer model (HfO2/SiOxHfy/Si substrate) is more plausible than a 1-layer model (HfO2/Si substrate) for the measured data.
Proceedings Title
Proceedings| 2005
Volume
788
Conference Dates
March 15-18, 2005
Conference Title
International Conference on Characterization and Metrology
Windover, D.
, Armstrong, N.
, Cline, J.
, Hung, P.
and Diebold, A.
(2005),
Characterization of Atomic Layer Deposition Using X-Ray Reflectrometry, Proceedings| 2005
(Accessed June 8, 2023)