U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 626 - 650 of 1314

Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects

January 1, 2007
Author(s)
Robert Keller, Roy H. Geiss, Nicholas Barbosa, Andrew Slifka, David T. Read
We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were

Dynamic Lorentz Microscopy of Micromagnetic Structure in Magnetic Tunnel Junctions

November 20, 2006
Author(s)
Justin Shaw, R.H. Geiss, Stephen E. Russek
Lorentz microscopy was used to study the micromagnetic structure and magnetization reversal in magnetic tunnel junctions (MTJs) fabricated with different processing conditions including a preoxidation process. The authors find that the free layer in a MTJ

Modeling MEMS Microhotplate Structures With SystemC

October 25, 2006
Author(s)
Ankush Varma, Muhammad Afridi, Akin Akturk, Paul Klein, Allen R. Hefner Jr., Bruce Jacob
Designers of SoCs with non-digital components, such as analog or MEMS devices, can currently use highlevel system design languages, such as SystemC, to model only the digital parts of a system. This is a significant limitation, since it makes key system

Single Photon Detector Comparison in a Quantum Key Distribution Link Testbed

October 25, 2006
Author(s)
Jonathan L. Habif, David S. Pearson, Robert Hadfield, Robert E. Schwall, Sae Woo Nam, Aaron J. Miller
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each

Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization

October 1, 2006
Author(s)
David W. Berning, Allen R. Hefner Jr., J J. Rodriguez, Colleen E. Hood, Angel Rivera
A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A fast

Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

October 1, 2006
Author(s)
Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power

On-Wafer Noise-Parameter Measurements at NIST

July 14, 2006
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched transistor

Terahertz radiometer design for traceable noise-temperature measurements

July 14, 2006
Author(s)
Eyal Gerecht, Dazhen Gu, James P. Randa, Dave K. Walker, Robert L. Billinger
We report on design of a radiometer for traceable noise-temperature measurements at terahertz frequencies, including noise measurements on cryogenic IF components, development and test of quasi-optical adapter technology, development of black body
Displaying 626 - 650 of 1314
Was this page helpful?