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Displaying 53051 - 53075 of 73697

Time Domain Modal Estimation

January 1, 1998
Author(s)
S Fahey, Jon R. Pratt
In a previous technical feature,2 we described some motives for performing structural dynamic tests and subsequently reviewed some frequency domain techniques for uncovering modal parameters. This time, we take up some applicable time domain algorithms by

Time-Dependent Conductance of Pd-Dosed SnO2 (110)

January 1, 1998
Author(s)
Richard E. Cavicchi, V Sukharev, Stephen Semancik
Time-dependent phenomena related to the reaction of ultrathin films of Pd deposited on SnO2 (110) surfaces of differing oxygen content have been investigated. Conductance measurements and x-ray photoemission spectroscopy (XPS) were used to characterize

TOTAL TDEV

January 1, 1998
Author(s)
Marc A. Weiss, David A. Howe

Trapped Bose-Einstein Condensates at Finite Temperature: A Two-Gas Model

January 1, 1998
Author(s)
Karen G. Burnett, M Edwards, Charles W. Clark, R J. Dodd
A simple picture describes the results of recent treatments of partially-condensed, dilute, trapped Bose gases at temperature T>O. The condensate wavefunction is nearly identical to that of a T=O condensate with the same number of condensate atoms, No. The

Trapped Ions, Entanglement, and Quantum Computing, ed. by B.L. Fearey

January 1, 1998
Author(s)
C J. Myatt, B E. King, D Kielpinski, Dietrich Leibfried, Q A. Turchette, Chris S. Wood, Wayne M. Itano, C Monroe, David J. Wineland
A miniature, elliptcal ring rf (Paul) ion trap has been used in recent experiments toward realizing a quantum computer in a trapped ion system. With the combination of small spatial dimensions and high rf drive potentials, around 500 V amplitude, we have

Trapped-Ion Quantum Simulator,

January 1, 1998
Author(s)
David J. Wineland, C Monroe, Wayne M. Itano, B E. King, Dietrich G. Leibfried, C J. Myatt, Chris S. Wood
Coherent manipulations involving the quantized motional and internal states of a single trapped ion can be used to simulate the dynamics of other systems. We consider some examples, including the action of a Mach Zehnder interferometer which uses entangled

Understanding Scanned Probe Oxidation of Silicon

January 1, 1998
Author(s)
John A. Dagata, T Inoue, J Itoh, H Yokoyama
A model for scanned probe microscope (SPM) silicon oxidation is presented. The model was derived from a consideration of the space-charge dependence of this solid-state reaction as a function of substrate doping type/level and has been verified
Displaying 53051 - 53075 of 73697
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