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Displaying 52551 - 52575 of 74192

Careers in Government: Bench Scientist to Policy Wonk

April 1, 1998
Author(s)
K B. Gebbie
The U.S. system for graduate education in physics is arguably the most effective system yet devised for advanced training in physics. Focused as it is on original research, it teaches students to identify significant problems, study them in depth, and

Cargo Container Transfer Requirements for the Mobile Offshore Base

April 1, 1998
Author(s)
Roger V. Bostelman, Kenneth R. Goodwin
The purpose of this requirements statement is to serve as a guideline to Mobile Offshore Base (MOB) concept developers, so that cargo handling requirements are fully considered and addressed in the development of concepts and preliminary designs. These

Critical Compilation of Atomic Wavelength and Energy Level Data

April 1, 1998
Author(s)
William C. Martin, J Sugar, Arlene Musgrove, Craig J. Sansonetti, Jean E. Sansonetti, Edward B. Saloman, V I. Azarov, Alexander Kramida, A N. Ryabtsev, T Shirai
The Atomic Energy Levels Data Center at the National Institute of Standards and Technology (NIST), in cooperation with other laboratories indicated above, is critically evaluating and compiling energy levels, wavelengths, and energy level classifications

Fracture Toughness Data for Brittle Materials

April 1, 1998
Author(s)
R G. Munro, Stephen W. Freiman, T L. Baker
Fracture toughness data, as represented by the critical stress intensity factor, K Ic, and the fracture energy, γ, have been compiled from publicly accessible sources for a wide range of brittle materials with an emphasis on structural ceramics and closely

Friend or Foe? Communication Gateways

April 1, 1998
Author(s)
Steven T. Bushby
Gateways play an important role in integrating building automation system components made by different manufacturers. This article explores the role gateways play in this application and describes benefits and limitations that need to be considered by

H-Out-Diffusion and Device Performance In n-i-p Solar Cells Utilizing High Temperature Hot Wire a si: H i-Layers

April 1, 1998
Author(s)
A. H. Mahan, R C. Reedy, E Iwaniczko, Q Wang, B P. Nelson, Y Xu, Alan Gallagher, H M. Branz, J Crandall, J Yang, S Guha
Hydrogen out-diffusion from the n/i interface region plays a major role in controlling the fill factor (FF) and resultant efficiency of n-i-p a-Si: H devices, with the i-layer deposited at high substrate temperatures by the hot wire technique. Modeling
Displaying 52551 - 52575 of 74192
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