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Dependence of Contact Resistance on Current for Good and Bad Ohmic Contacts to Quantized Hall Resistors

Published

Author(s)

Kevin C. Lee

Abstract

Dependence of contact resistance on current has been measured for a large number of ohmic contacts to quantized Hall resistors under quantum Hall effect conditions. A definite trend is observed in the current dependencies of resistances of good and bad contacts, regardless of the physical cause of the poor contact.
Proceedings Title
Tech. Dig., Conf. on Precision Electromagnetic Measurements
Conference Dates
July 6-10, 1998
Conference Location
Washington, DC

Keywords

Breakdown of QHE, contact resistance, ohmic contacts, quantum Hall effect, quantized Hall resistor, 2-DEG

Citation

Lee, K. (1998), Dependence of Contact Resistance on Current for Good and Bad Ohmic Contacts to Quantized Hall Resistors, Tech. Dig., Conf. on Precision Electromagnetic Measurements, Washington, DC, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=15798 (Accessed May 23, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 1, 1998, Updated February 19, 2017