January 1, 2000
Author(s)
R P. Lu, B A. Morgan, K L. Kavanagh, Cedric J. Powell, P J. Chen, F Serpa, William F. Egelhoff Jr.
We have used room temperature, ballistic electron emission microscopy (BEEM) to measure hot-electron transport through ultra-thin Au/Co multilayre structures deposited onto Si. The samples consist of Au/Co/Si or (Au/Co) n/AuSi diodes, sputter deposited at