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Interfacial Scattering of Hot Electrons in Ultrathin Au/Co Films

Published

Author(s)

R P. Lu, B A. Morgan, K L. Kavanagh, Cedric J. Powell, P J. Chen, F Serpa, William F. Egelhoff Jr.

Abstract

We have used room temperature, ballistic electron emission microscopy (BEEM) to measure hot-electron transport through ultra-thin Au/Co multilayre structures deposited onto Si. The samples consist of Au/Co/Si or (Au/Co)n/AuSi diodes, sputter deposited at 175K to 300K, where n is the number of repeat layers.
Citation
Journal of Vacuum Science and Technology
Volume
18

Keywords

ballistic electron emission microscopy (, hot electrons, interfacial scattering

Citation

Lu, R. , Morgan, B. , Kavanagh, K. , Powell, C. , Chen, P. , Serpa, F. and Egelhoff Jr., W. (2000), Interfacial Scattering of Hot Electrons in Ultrathin Au/Co Films, Journal of Vacuum Science and Technology (Accessed April 17, 2024)
Created December 31, 1999, Updated October 12, 2021