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NIST Authors in Bold

Displaying 46801 - 46825 of 73697

Workshop on Temperature Measurement of Semiconductor Wafers Using Thermocouples

January 1, 2001
Author(s)
Kenneth G. Kreider, D P. DeWitt, Benjamin K. Tsai, B Lojek
Temperature measurement is an important parameter in most semiconductor processes. These measurements are necessary in temperature ranges as low as below 0 C in some plasma etch processes, to near room temperature for soft bakes of resists, to 500 C for

A Mo-Cu Superconducting Transition-Edge Microcalorimeter with 4.5 eV Energy Resolution at 6 keV

December 31, 2000
Author(s)
Kent D. Irwin, Gene C. Hilton, John M. Martinis, Steven Deiker, Norman F. Bergren, Sae Woo Nam, David A. Rudman, David A. Wollman
We describe a superconducting transition-edge microcalorimeter with an energy resolution of 4.5 1 0.1 eV full-width at half-maximum (FWHM) for Mn Kα X-rays from an 55Fe source. The thermometer consists of a photolithographically patterned Mo-Cu

A Novel Method for Fabricating CD Reference Materials with 100 nm Linewidths

December 31, 2000
Author(s)
Richard A. Allen, Loren W. Linholm, Michael W. Cresswell, Colleen E. Hood
A technique has been developed to fabricate 100-nm CD reference features with I-line lithography by utilizing a unique characteristic of single-crystal silicon-on-insulator films: Under certain etch conditions, the edges of features align to

MEMS Standardization

December 31, 2000
Author(s)
Michael Gaitan
Standardization and metrology are critical infrastructure needs for the MEMS industry. These needs incluse standard test structures and test methods, and standard reference materials. In addition to this, new protocols to disseminate standards and test

Multiplexed Readout of Superconducting Bolometers

December 31, 2000
Author(s)
D. J. Benford, C. A. Allen, James A. Chervenak, M. M. Freund, A. S. Kutyrev, S. H. Mosely, Rick A. Shafer, Johannes G. Staguhn, Erich N. Grossman, Gene C. Hilton, Kent D. Irwin, John M. Martinis, Sae Woo Nam, Carl D. Reintsema
Studies of astrophysical emission in the far-infrared and submillimeter require large arrays of detectors containing from hundreds to thousands of elements. A multiplexed readout is necessary for practical implementation of such arrays, and can be

New SWEAT Method for Fast, Accurate, and Stable Electromigration Testing on Wafer Level

December 31, 2000
Author(s)
Jochen von Hagen, G. Antonin, J. Fazekas, Linda M. Head, Harry A. Schafft
The Standard Wafer Level Electromigration Accelerated Test (SWEAT) is one of a few highly accelerated stress tests of metal line test structures that are used to monitor electromigration resistance. Earlier works and our own examinations have shown that

Performance of Multiplexed SQUID Readout for Cryogenic Sensor Arrays

December 31, 2000
Author(s)
James A. Chervenak, Erich N. Grossman, Kent D. Irwin, John M. Martinis, Carl D. Reintsema, C. A. Allen, David I. Bergman, S. H. Mosely, Rick A. Shafer
We report on the implementation of a multiplexer that users superconducting quantum interference devices (SQUIDs) to read out low-impedance cryogenic detectors. Using prototype chips, a circuit was built which interfaces eight input SQUID channels with a

SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications

December 31, 2000
Author(s)
Allen R. Hefner Jr., Ranbir Singh, Jih-Sheng Lai, David W. Berning, Sebastien Bouche, Christophe C. Chapuy
The electrical performance of Silicon Carbide (SiC) diodes are evaluated and compared to commercially available Silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery

Superconducting Transition-Edge-Microcalorimeter X-ray Spectrometer with 2 eV Energy Resolution at 1.5 keV

December 31, 2000
Author(s)
David A. Wollman, Sae Woo Nam, Dale Newbury, Gene C. Hilton, Kent D. Irwin, Norman F. Bergren, Steven Deiker, David A. Rudman, John M. Martinis
We describe the operation and performance of a prototype microcalorimeter ?energy-dispersive? (nondispersive) x-ray spectrometer (mcal EDS) developed at NIST for use in x-ray microanalysis and x-ray astronomy. The low-energy microcalorimeter detector

Temperature Dependence of Soft Breakdown and Wear-Out in Sub-3 nm SiO 2 Films

December 31, 2000
Author(s)
John S. Suehle, Eric M. Vogel, Bin Wang, J B. Bernstein
A comprehensive time-dependent dielectric breakdown study was conducted on sub-3 nm SiO 2 films over a temperature range from 22 0C to 350 0C. Two breakdown modes were observed in current versus time characteristics and low voltage I-V curves depending on

1,6-Hexanedithiol Monolayers on Au(111): A Multi-Technique Structural Study

December 29, 2000
Author(s)
T Leung, M Gerstenberg, D J. Lavrich, G Scoles, F Schreiber, G Poirier
Monolayers of 1,6-hexanedithiol [HS(CH 2) 6SH] deposited on Au(111) from the gas phase were characterized by scanning tunneling microscopy (STM), grazing incidence X-ray diffraction (GIXD), and low energy atom diffraction (LEAD). Molecular resolution STM

Report of the NIST MEL Architecture Task Force

December 29, 2000
Author(s)
Harry A. Scott, John Evans, Steven R. Ray, E C. Teague, James S. Albus, Herbert T. Bandy, Edward J. Barkmeyer Jr., Neil Christopher, M A. Donmez, Hui-Min Huang, Albert W. Jones, Elena R. Messina, Jim G. Nell, Frederick M. Proctor, Evan K. Wallace
The NIST Manufacturing Engineering Laboratory undertook a series of internal working meetings to examine all of its architecture efforts. A survey of work was performed, and recommendations were identified. This document, initially compiled in 1999
Displaying 46801 - 46825 of 73697
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