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Displaying 45801 - 45825 of 75143

Isotopic Ratio Measurements by Time-of-Flight Secondary Ion Mass Spectrometry

July 1, 2001
Author(s)
Albert J. Fahey, S R. Messenger
Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is often considered synonymous with SIMS in the static limit where the ion fluence on the sample surface is so low that damage is negligible. For this same reason its use in measuring isotopic

Luminous Intensity Calibrations and Colorimetry of LEDs at NIST

July 1, 2001
Author(s)
Carl C. Miller, Yoshihiro Ohno
Light Emitting Diodes (LEDs) are unique light sources differing greatly from traditional lamps in terms of physical size, flux level, spectrum and spatial distribution. The transfer of photometric scales from luminous intensity standard lamps to LEDs is

Magnetoelectronic Devices Using a-Fe 2 O 3 Bottom GMR Spin-Valves

July 1, 2001
Author(s)
S Bae, S Zurn, William F. Egelhoff Jr., P J. Chen, L Sheppard, E J. Torok, J H. Judy
The characteristics of a magnetoresistive random access memory (MRAM) and a giant magnetoresistive (GMR) transpinnor, which is an active solid-state device, have been investigated using α-Fe 2O 3 bottom GMR spin-valves. Patterned α-Fe 2O 3 bottom GMR spin

Mass Flow Research and Standards: NIST Workshop Results

July 1, 2001
Author(s)
Robert F. Berg, David S. Green, G E. Mattingly
A recent workshop at the National Institute of Standards and Technology (NIST) identified research and standards that will benefit users and manufacturers of mass flow controllers and related equipment. The workshop identified problems with flow

Micromechanical Torque Magnetometer for In Situ Thin-film Measurements

July 1, 2001
Author(s)
John M. Moreland, Albrecht Jander, James A. Beall, Pavel Kabos, Stephen E. Russek
We describe a new type of magnetometer based on a microelectromechanical system (MEMS) for in situ monitoring of magnetic film moment during the film deposition process. The magnetometer measured mechanical torque on a film as it is deposited onto a

Modeling Technology for a Model-Intensive Enterprise

July 1, 2001
Author(s)
Michael Gruninger, David W. Flater, Peter O. Denno
The Object Management Group (OMGtm) is defining specifications supporting a modeling environment that permits models from a family of modeling languages to populate a repository. In that environment, mechanisms that give coherence to the collection of

Molecular Dynamics Study of Thin Water-Acetonitrile Films

July 1, 2001
Author(s)
Raymond D. Mountain
Molecular dynamics simulations are used to generate the composition and orientation profiles for thin, water-acetontitrile films. The liquid-vapor interfaces of the films are found to be acetonitrile rich, even for low acetonitrile concentrations. For low

MOS Device Characterization

July 1, 2001
Author(s)
Eric M. Vogel, Veena Misra
This chapter provides a survey and discussion of the electrical characterization techniques commonly used to determine the material, performance, and reliability properties of state-of-the-art metal-oxide-semiconductor (MOS) devices used in silicon

Multiparameter Equations of State - Recent Trends and Future Challenges

July 1, 2001
Author(s)
R Span, Wolfgang Wagner, Eric Lemmon, R Jacobsen
The purpose of this article is to update the common knowledge on characteristic features of empirical multi-parameter equations of state, to increase the confidence of potential users, and possibly to attract other scientists to theoretical and

Nonresonant Inelastic X-Ray Scattering Study of Cubic Boron Nitride

July 1, 2001
Author(s)
S Galambosi, J A. Soininen, K Hamalainen, Eric L. Shirley, C C. Kao
During the recent years boron nitride has been extensively studied via numerous experimental techniques because it exhibits several fascinating characteristics such as semiconducting properties, extreme hardness, high thermal conductivity and large band

Novel High-Voltage Range Resistors for Ac-DC Thermal Converters

July 1, 2001
Author(s)
H. O. Wolcott, Joseph R. Kinard Jr., Thomas E. Lipe Jr.
This paper discusses the factors contributing to the ac-dc differences of high-voltage thermal converters. A novel resistor designed to minimize these contributions is described and measurements illustrating its performance are summarized.

On Boundary Condition-Induced States in Low-Dimensional Semiconductor Structures

July 1, 2001
Author(s)
W Jaskolski, R -. Oszwaldowski, Garnett W. Bryant
We examine different solutions of multi-band k.p Hamiltonians. We refer mainly to the intrinsic surface states, with energies in the forbidden energy gap, that were proposed recently for bare and capped nanocrystals. We review analytical and numerical

On/Off Fluorescence Intermittency of Single Semiconductor Quantum Dots

July 1, 2001
Author(s)
M Kuno, D P. Fromm, H F. Hamann, Alan Gallagher, David Nesbitt
Single molecule confocal microscopy is used to investigate the detailed kinetics of fluoresence intermittency in colloidal H-VI (CdSe) semiconductor quantum dots. two distinct modes of behavior are observed corresponding to i) sustained on episodes (Τ on)

On/Off Flurescence Intermittency of Single Semiconductor Quantum Dots

July 1, 2001
Author(s)
M Kuno, D P. Fromm, H F. Hamann, Alan Gallagher, David Nesbitt
Single molecule confocal microscopy is used to investigate the detailed kinetics of fluorescence intermittency in colloidal II-VI (CdSe) semiconductor quantum dots. Two distinct modes of behavior are observed corresponding to (i) sustained on episodes (τ

Panel Session: Educational Needs for Simulation - A Government Perspective

July 1, 2001
Author(s)
Charles R. McLean
At the National Institute of Standards and Technology, the goal of the program in Manufacturing Simulation and Visualization is to accelerate the development of standards that are needed by manufacturing users and simulation software vendors. As such, our

Polymer Chain Relaxation: Surface Outpaces Bulk

July 1, 2001
Author(s)
William E. Wallace, Daniel A. Fischer, K Efimenko, Wen-Li Wu, Jan Genzer
In this work we show how carbon near-edge X-ray absorption fine structure (NEXAFS) can be applied to detect both surface and bulk segmental relaxation in uniaxially deformed polystyrene samples. We demonstrate that by simultaneously monitoring the partial
Displaying 45801 - 45825 of 75143