Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Precision Measurements of Transport Properties for an Energy Level Fan Diagram of GaAs/AlGaAs in the Integer Quantum Hall Regime

Published

Author(s)

J. Matthews, Marvin E. Cage

Abstract

We present temperature and current dependent measurements of sigmaxx} and sigmaxy} in the integer quantum Hall effect regime, with a GaAs/AlGaAs heterostructure that is used to maintain the US resistance standard. We obtain properties such as the effective g-factor and the activation work carried out at NIST Gaithersburg, MD.
Proceedings Title
Bulletin of the American Physical Society
Conference Dates
March 12-16, 2001
Conference Location
Seattle, WA

Keywords

current dependence, quantum Hall effect, temperature dependence

Citation

Matthews, J. and Cage, M. (2001), Precision Measurements of Transport Properties for an Energy Level Fan Diagram of GaAs/AlGaAs in the Integer Quantum Hall Regime, Bulletin of the American Physical Society, Seattle, WA (Accessed December 4, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 28, 2001, Updated October 12, 2021