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Precision Measurements of Transport Properties for an Energy Level Fan Diagram of GaAs/AlGaAs in the Integer Quantum Hall Regime

Published

Author(s)

J. Matthews, Marvin E. Cage

Abstract

We present temperature and current dependent measurements of sigmaxx} and sigmaxy} in the integer quantum Hall effect regime, with a GaAs/AlGaAs heterostructure that is used to maintain the US resistance standard. We obtain properties such as the effective g-factor and the activation work carried out at NIST Gaithersburg, MD.
Proceedings Title
Bulletin of the American Physical Society
Conference Dates
March 12-16, 2001
Conference Location
Seattle, WA

Keywords

current dependence, quantum Hall effect, temperature dependence

Citation

Matthews, J. and Cage, M. (2001), Precision Measurements of Transport Properties for an Energy Level Fan Diagram of GaAs/AlGaAs in the Integer Quantum Hall Regime, Bulletin of the American Physical Society, Seattle, WA (Accessed April 19, 2024)
Created February 28, 2001, Updated October 12, 2021