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Precision Measurements of Transport Properties for an Energy Level Fan Diagram of GaAs/AlGaAs in the Integer Quantum Hall Regime
Published
Author(s)
J. Matthews, Marvin E. Cage
Abstract
We present temperature and current dependent measurements of sigmaxx} and sigmaxy} in the integer quantum Hall effect regime, with a GaAs/AlGaAs heterostructure that is used to maintain the US resistance standard. We obtain properties such as the effective g-factor and the activation work carried out at NIST Gaithersburg, MD.
Proceedings Title
Bulletin of the American Physical Society
Conference Dates
March 12-16, 2001
Conference Location
Seattle, WA
Pub Type
Conferences
Keywords
current dependence, quantum Hall effect, temperature dependence
Matthews, J.
and Cage, M.
(2001),
Precision Measurements of Transport Properties for an Energy Level Fan Diagram of GaAs/AlGaAs in the Integer Quantum Hall Regime, Bulletin of the American Physical Society, Seattle, WA
(Accessed October 13, 2025)