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Displaying 42151 - 42175 of 74084

Influence of Layered-Silicates on the Phase Separated Morphology of PS

January 1, 2003
Author(s)
K Yurekli, Alamgir Karim, Eric J. Amis, R Krishnamoorti
The influence of added nanometer thick layered-silicates on the phase-separated morphology of a near critical blend of PS and PVME was examined. Thin films of the blend with 0.8 vol % of the nanoscale particles were examined by atomic force microscopy as a

Interlaboratory comparison of InGaAsP EX-SITU characterization

January 1, 2003
Author(s)
Alexana Roshko, Kristine A. Bertness
A study to improve the accuracy of ex-situ characterization of InGaAsP materials for optoelectronics is underway. Six InGaAsP thin film specimens, with nominal photoluminescence wavelengths of 1.1, 1.3 and 1.5 mm, have been measured, with X-ray diffraction

Investigation of the Shape of InGaAs/GaAs Quantum Dots

January 1, 2003
Author(s)
Susan Y. Lehman, Alexana Roshko, Richard Mirin, John E. Bonevich
Three samples of self-assembled In 0.44Ga 0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM)) and high-resolution transmission electron microscopy (TEM) in order to characterize
Displaying 42151 - 42175 of 74084
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