Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Effect of Changing the Electrode Gap on the Spatial and Electrical Properties of O2/CF4 Plasmas

Published

Author(s)

Kristen L. Steffens, Mark A. Sobolewski

Abstract

Planar laser-induced fluorescence (PLIF) measurements were made to determine 2-D spatial maps of CF2 density as a chemical marker of plasma uniformity in 9% O2/91% CF4 chamber-cleaning plasmas. Measurements were made in the capacitively-coupled Gaseous Electronics Conference (GEC) RF Reference Cell as pressure was varied from 13 Pa (100 mTorr) to 133 Pa (1000 mTorr) and electrode gap was varied from 2.25 cm to 0.5 cm. Broadband optical emission and discharge current and voltage measurements were also made and compared to the PLIF results. Smaller gaps resulted in increased radial uniformity and extended the pressure range over which CF2 density and electrical properties remain insensitive to pressure. These effects are explained by a decrease in the bulk plasma resistance at narrower electrode gaps, which changes the path that rf current takes through the discharge, thus affecting where electron heating and CF2 production occur. These results provide insight into the optimization of chamber-cleaning processes and reactors as well as provide necessary data for validation of plasma simulations.
Citation
Journal of Vacuum Science and Technology A
Volume
21
Issue
No. 1

Keywords

CF4, electrical measurements, fluorocarbon, LIF, optical diagnostics, planar laser-induced flurescence, plasma, PLIF, rf discharge

Citation

, K. and Sobolewski, M. (2003), Effect of Changing the Electrode Gap on the Spatial and Electrical Properties of O<sub>2</sub>/CF<sub>4</sub> Plasmas, Journal of Vacuum Science and Technology A (Accessed April 20, 2024)
Created January 1, 2003, Updated February 17, 2017