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Displaying 41026 - 41050 of 73970

Assembly Simulation in the Design Process in a Distributed Environment

June 1, 2003
Author(s)
Charles R. McLean, Deogratias Kibira, William Reiter, Paul Maropoulos
Simulation technology i s applicable across a distributed enterprise in the pursuit of bringing high quality products to the market in minimum time. The proliferation of computing technology and software applications now makes simulations available to many

ASSET: Security Assessment Tool for Federal Agencies

June 1, 2003
Author(s)
Elizabeth B. Lennon
This ITL Bulletin describes the features and capabilities of the Automated Security Self-Evaluation Tool (ASSET), ITL's governmentwide IT security assessment tool. ASSET automates the completion of the security questionnaire in NIST Special Publication 800

Banishing Quasiparticles From Josephson-Junction Qubits: Why and How To Do It

June 1, 2003
Author(s)
Kristine Lang, Sae Woo Nam, Joe Aumentado, John M. Martinis, C Urbina
Current-biased Josephson junctions are prime candidates for the implementation of quantum bits; however, a present limitation is their coherence time. In this paper we qualitatively describe the role of quasiparticles in decoherence. We discuss two methods

BFRL Publications, 2002

June 1, 2003
Author(s)
Star R. Burgess, Kathleen C. Whisner, Glenn P. Forney, Paul A. Reneke
Welcome to BFRL Publications, 2002. These two CD-ROMs contain publications produced by BFRL staff, publications resulting from contracts or grants with BFRL and publications contained in poceedings from BFRL sponsored conferences orworkshops. The Volume 1

C 4 F 6 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in Inductively Coupled Plasma and Etch Processes Performance

June 1, 2003
Author(s)
A Nicoletti, P Srinivasan, M Riva, Eric C. Benck, A N. Goyette, Yicheng Wang, J M. Kim, P Hsieh, A Athayde, Abhay Joshi
Hexafluoro-1,3-butadiene (C 4F 6) is a relatively new etch gas for the manufacturing of semiconductor devices, especially in critical etch processes that need high aspect ratios and selectivity. It is able to combine very high performance with a benign

Cold Discharge of CF 3 I in a Simulated Aircraft Engine Nacelle

June 1, 2003
Author(s)
Jiann C. Yang, Samuel L. Manzello, Marc R. Nyden, M D. Connaghan
An aircraft engine nacelle simulator was built to study the dispersion behavior of CF3I, a potential halon 1301 (CF3Br) replacement, at an extremely cold temperature (nominally 40 C). The experimental fixture consists of a simulated engine nacelle with

Comparative Studies of MgB 2 /Mg Nano-Composites and Press-Sintered MgB 2 Pellets

June 1, 2003
Author(s)
Q Li, L Wu, Y Zhu, A R. Moodenbaugh, G Gu, M Suenaga, Z X. Ye, Daniel A. Fischer
We present our studies of superconducting and microstructural properties of bulk MgB 2/Mg nano-composites and press-sintered MgB 2. TEM investigation revealed that the composites are very dense, consisting of nano-sized MgB 2 grains connected by the well

Control of Coherent Light and its Broad Applications

June 1, 2003
Author(s)
Jun Ye, R J. Jones, K W. Holman, S M. Foreman, D J. Jones, S T. Cundiff, John L. Hall, T M. Fortier, A Marian
A remarkable synergy has been formed between the technology of precision optical frequency metrology and ultrafast laser science. This has resulted in control of the frequency spectrum produced by mode-locked lasers,which consists of a regular comb of

Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide

June 1, 2003
Author(s)
H S. Bennett, Howard Hung
The majority electron density as a function of the Fermi energy is calculated in Zinc Blende, n-type GaSb for donor densities between 10 16 cm -3 and 10 19 cm -3. These calculations solve the charge neutrality equation self-consistently for a four-band

Deprotection Volume Characteristics and Line Edge Morphology in Chemically Amplified Resists

June 1, 2003
Author(s)
Ronald L. Jones, C G. Willson, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, B C. Trinque
The focus of this paper is the form of spatial heterogeneity of deprotection at the eventual pattern edge. The form results from the packing of fuzzy blobs consisting of volumes of deprotection created by individual photogenerated acids. The form and size

Design and Performance of Capping Layers for EUV Multilayer Mirrors

June 1, 2003
Author(s)
Sasa Bajt, H N. Chapman, Nhan Nguyen, J Alameda, J C. Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles Tarrio, Steven Grantham
The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of utmost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in

Electronics for Arrays of Transition Edge Sensors using Digital Signal Processing

June 1, 2003
Author(s)
Sae Woo Nam, Joern Beyer, Gene C. Hilton, Kent D. Irwin, Carl D. Reintsema, John M. Martinis
Single-pixel transition-edge sensors (TES) are useful for a variety of applications requiring the detection of photons from sub-millimeter wavelengths to gamma rays. Arrays of TESs are required in the next-generation instruments to continue to be useful

Energy Distribution of Interface Traps in High-K Gated MOSFETs

June 1, 2003
Author(s)
Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A. Richter, Da-Wei Heh, John S. Suehle
We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO2 gated nMOSFETs. Our results have revealed that the Dit is much higher in the

Enhancing Virtual Product Representation for Advanced Design Repository Systems

June 1, 2003
Author(s)
Simon Szykman, Matt Bohm, RJ B. Stone
This paper describes the transformation of an existing set of heterogeneous product knowledge into a coherent design re-pository that supports product information archival, storage and reuse. Existing product information was analyzed and compared against

Evolutions in Hardness Scales Definition

June 1, 2003
Author(s)
G Barbato, A G. Germak, K -. Herrmann, Samuel Low
A conventional characteristic of hardness measurements in the strong dependency on the official definition of each scale. For this reason, and to assure a good connection between National Metrology Institutes (NMIs), scientific organizations (e.g., IMEKO1
Displaying 41026 - 41050 of 73970
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