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Displaying 38851 - 38875 of 73461

In Depth Observational Studies of Professional Intelligence Analysts

March 1, 2004
Author(s)
Jean C. Scholtz, Emile L. Morse
Our goal is to produce metrics for measuring effectiveness of software tools and environments produced for the intelligence community. To this end we need to understand the analytic process and to determine which data need to be captured to meaningfully

Influence of Grain Size on the Tensile Creep Behavior of Ytterbium-Containing Silicon Nitride

March 1, 2004
Author(s)
Sheldon M. Wiederhorn, A R D Lopez, William E. Luecke, Michael J. Hoffmann, B Hockey, J French, D C. Yoon
The effect of grain size on the tensile creep of silicon nitride is investigated on two materials, one containing 5 % by volume Yb2O3, the other containing 5 % by volume Yb203 and 0.5 % by mass Al2O3. Annealing of the alumina-free silicon nitride increased

Intramural comparison of NIST laser and optical fiber power calibrations

March 1, 2004
Author(s)
John H. Lehman, Igor Vayshenker, David J. Livigni, Joshua A. Hadler
The responsivity of two optical detectors was determined by the method of direct substitution in four different NIST measurement facilities. The measurements were intended to demonstrate the determination of absolute responsivity as provided by NIST

MALDI of Layered Polymer Films

March 1, 2004
Author(s)
Barry J. Bauer, Kathleen M. Flynn, B D. Vogt
A layered preparation method is introduced that produces structured MALDI targets with well-defined phase sizes and compositions. Tri-a-naphthyl benzene is a glassy matrix that forms smooth films. It is layered with polystyrenes or polyethylene glycol

Nano-Lithography in Ultra-High Vacuum (UHV) for Real World Applications

March 1, 2004
Author(s)
James D. Gilsinn, Hui Zhou, Bradley N. Damazo, Joseph Fu, Richard M. Silver
As nano-lithography technology improves, more companies and research groups have the capability to create nano-scale structures. Scanning tunneling microscopes (STMs) are commonly used to create these structures and evaluate them afterward. One difficulty

Overview of the TREC 2003 Question Answering Track

March 1, 2004
Author(s)
Ellen M. Voorhees
The TREC 2003 question answering track contained two tasks, the passages task and the main task. In the passages task, systems returned a single text snippet in response to factoid questions; the evaluation metric was the number of snippets that contained

Overview of the TREC 2003 Robust Retrieval Track

March 1, 2004
Author(s)
Ellen M. Voorhees
The robust retrieval track is a new track in TREC 2003. The goal of the track is to improve the consistency of retrieval technology by focusing on poorly performing topics. In addition, the track brings back a classic, ad hoc retrieval task to TREC that

Pore Size Distributions in Low-k Dielectric Thin Films From SANS Porosimetry

March 1, 2004
Author(s)
R C. Hedden, V. J. Lee, Christopher L. Soles, Barry J. Bauer
A small-angle neutron scattering (SANS) porosimetry technique is presented for characterization of pore structure in nanoporous thin films. Porosimetry experiments are conducted using a contrast match solvent (a mixture of toluene-d8 and toluene-h8) having

Propagation Behavior of Machining Cracks in Delayed Fracture

March 1, 2004
Author(s)
Yasumitsu Matsuo, L K. Ives
The propagation behavior (subcritical crack growth) of machining induced cracks in silicon nitride was investigated by conducting constant stress (CS) and constant stress rate (CSR) tests. A dye impregnation technique that forces a palladium nitrate

Quartz capillary flow meter for gases

March 1, 2004
Author(s)
Robert F. Berg
This article describes an accurate meter for gas flow rates below 1000 micromol/s. (~1 micromol/s  1.3 cm3/min at 0 °C and 1 atm.) Two gauges measure the input and output pressures as the gas flows through a flow element consisting of either a single

Recent Developments in Producing Test-structures for Use as Critical Dimension Reference Materials

March 1, 2004
Author(s)
Richard A. Allen, Ravi I. Patel, Michael W. Cresswell, Christine E. Murabito, Brandon Park, Monica D. Edelstein, Loren W. Linholm
NIST is developing Single-Crystal Critical-Dimension Reference Materials (SCCDRM) which address the need of the semiconductor and semiconductor equipment industries for a well-characterized artifact to serve as the basis for comparing the performance of
Displaying 38851 - 38875 of 73461
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