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Displaying 35526 - 35550 of 74026

SI Realization of Small Forces Using an Electrostatic Force Balance

January 1, 2006
Author(s)
Jon R. Pratt, John A. Kramar
We describe the realization of micronewton forces in a fashion consistent with the International System of Units (SI) using the National Institute of Standards and Technology (NIST) electrostatic force balance. A comparison between deadweight and

Small Angle Neutron Scattering from Labeled Single Wall Carbon Nanotubes

January 1, 2006
Author(s)
Barry J. Bauer, Erik K. Hobbie, Matthew Becker
Small angle neutron scattering (SANS) is used with the high concentration method to extract single particle scattering from single wall carbon nanotubes (SWNTs). The SWNT material was labeled by covalently attaching -C4H9 or -C4D9 groups by use of free

Small Diameter Waveguide for Wideband Acoustic Emission

January 1, 2006
Author(s)
Marvin A. Hamstad
The signals obtained from two wideband conical sensors were compared in the time, frequency and the time/frequency domains. The signals were generated by pencil lead-breaks on the surface (out-of-plane) or close to the midplane of the edge (in-plane) of a

Source-Assisted Direction Estimation Inside Buildings

January 1, 2006
Author(s)
Kamran Sayrafian, D Kaspar
We have implemented a quantum key distribution (QKD) system with polarization encoding at 850 nm over 1 km of optical fiber. The high-speed management of the bit-stream, generation of random numbers and processing of the sifting algorithm are all handled

Specular Gloss

January 1, 2006
Author(s)
Maria E. Nadal, E A. Early, E A. Thompson

Specular gloss:

January 1, 2006
Author(s)
Maria E Nadal, Edward A Early, E Ambler Thompson

Spontaneously grown GaN and AlGaN nanowires

January 1, 2006
Author(s)
Kristine A. Bertness, Alexana Roshko, Norman A. Sanford, Joy Barker, Albert Davydov
We have identified crystal growth conditions in gas-source molecular beam epitaxy (MBE) that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (1 1 1) substrates. The nanowires were oriented along the GaN c-axis and normal to the
Displaying 35526 - 35550 of 74026
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