March 1, 2007
Author(s)
B Bunday, J Allgair, E Solecky, C Archie, Ndubuisi George Orji
… metrology is becoming more urgent to address critical gaps in metrology for both lithographic and etch processes. … (ArF source, where lambda=193 nm) sometimes results in photoresist lines with re-entrant profiles or T-topping, … (CD) as too large. Recent advances in gate process technology also raise challenges to traditional top-down …