March 1, 2001
Author(s)
Bin Wang, John S. Suehle, Eric M. Vogel, J B. Bernstein
Ultra-thin SiO 2 films (t ox 2.0 nm) were stressed under DC, unipolar, and bipolar pulsed bias conditions up to a pulse repetition frequency of 50 kHz. The time-to-breakdown (t BD), the number of defects at breakdown (N^dBD), and the number of defects