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A circuit is described for making a variety of measurements on half-bridge Insulated Gate Bipolar Transistor (IGBT) pairs for validating IGBT models. The circuit incorporates two robust isolated gate drives for the IGBTs. Each IGBT is driven with an eight
Loucas G. Christophorou, James K. Olthoff, MVVS. Rao
To aid the many and diverse applications for which perfluoropropane (C 3F 8) is suited, we critically evaluate and synthesize existing knowledge on electron scattering and electron energy-loss processes for the C 3F 8 molecule, and provide recommendations