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Electronics

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Displaying 551 - 575 of 699

Embedded multiconductor transmission line characterization

June 8, 1997
Author(s)
Dylan F. Williams
This paper presents a measurement method that characterizes lossy printed multiconductor transmission lies embedded in transitions, connectors, or packages with significant electrical parasitics. We test the method on a pair of lossy coupled asymmetric

Electrothermal Simulation of an IGBT PWM Inverter

May 1, 1997
Author(s)
Alan Mantooth, Allen R. Hefner Jr.
A recently developed electrothermal network simulation methodoogy is used to analyze the behavior of a full-bridge, pulse-width modulated (PWM), voltage-source inverter, which uses insulated gate bipolar transistors (IGBT's) as the switching devices. The

Multiconductor Transmission Line Characterization

May 1, 1997
Author(s)
Dylan F. Williams
This paper presents a measurement method that completely characterizes lossy printed multiconductor transmission lines. It determines not only the matrices of impedances and admittances per unit length describing the transmission line in the conductor

IGBT Half-Bridge Shoot-Through Characterization for Model Validation

December 31, 1996
Author(s)
David W. Berning, Allen R. Hefner Jr.
A circuit is described for making a variety of measurements on half-bridge Insulated Gate Bipolar Transistor (IGBT) pairs for validating IGBT models. The circuit incorporates two robust isolated gate drives for the IGBTs. Each IGBT is driven with an eight

Electron Interactions With C 3 F 8

September 1, 1996
Author(s)
Loucas G. Christophorou, James K. Olthoff, MVVS. Rao
To aid the many and diverse applications for which perfluoropropane (C 3F 8) is suited, we critically evaluate and synthesize existing knowledge on electron scattering and electron energy-loss processes for the C 3F 8 molecule, and provide recommendations
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