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Journals

Consensus Characterization of 16 FMR1 Reference Materials: A Consortium Study by the Fragile Xperts

Author(s)
Jean A. Wilson, Victoria M. Pratt, Amit Phansalkar, Kasinathan Muralidharan, W E. Highsmith, J C. Beck, Scott Bridgeman, Ebony M. Courtney, Lidia Epp, Andrea Ferreira-Gonzalez, Nick L. Hjelm, Leonard Holtegaard, Mohamed A. Jama, J P. Jakupciak, Monique A. Johnson, Paul Labrousse, Elaine Lyon, Thomas W. Prior, C D. Richards, Kristy L. Richie, Benjamin B. Roa, Elizabeth M. Rohlfs, Tina Sellers, Stephanie Sherman, Karen M. Siegrist, Lawrence M. Silverman, Joanna Wiszniewska, Lisa Kalman
Fragile X (FX) syndrome is caused by expansion of a (CGG)n repeat in the FMR1 gene, occurs in approximately 1:3500 males and causes mental retardation

Universal RNA Reference Materials for Gene Expression

Author(s)
M Cronin, K Ghosh, F Sistare, J Quackenbush, V L. Vilker, C D. O'Connell
A NIST sponsored workshop entitled Metrology and Standards Needs for Gene Expression Technologies: Universal RNA Standards was held on March 28-29, 2003 to

Amino Acid Exchangeability from Experimental Data

Author(s)
L Y. Yampolsky, Arlin Stoltzfus
Amino acid sequence differences between proteins are often interpreted by reference to a pairwise measure of amino acid similarity, based either on observed

The Microwave Spectrum and Ground State Structure of H2O-HI

Author(s)
A McIntosh, T Walther, R R. Lucchese, J W. Bevan, R D. Suenram, A C. Legon
The microwave spectrum and ground state structure of H^ 2O HI are reported. The fitted ground state constants include: A 0=428.9 GHz, B 0=2189.7351(10) MHz, C 0

Structure and Reactivity of the Hydrated Hematite (0001) Surface

Author(s)
T P. Trainor, Anne M. Chaka, P J. Eng, M Newville, G A. Waychunas, J G. Catalano, G E. Brown
Hematite (alpha-Fe 2 O 3 ) is significantly more reactive to water and metal ions than its isostructure corundum (alpha-Al 2 O 3u) under environmental

A Predictive Formula for the Electron Stopping Power

Author(s)
Aleksander Jablonski, S Tanuma, Cedric J. Powell
We describe the development of a new analytical formula for the electron stopping power (SP) for electron energies between 200 eV and 30 keV. This formula

Arsenic and Antimony Implantations in SiC

Author(s)
J R. Tucker, M Rao, O W. Holland, P Chi, N A. Papanicolaou, J A. Freitas
Single and multiple energy As and Sb implantations were performed into p-type 6H-SiC epitaxial layers at room temperature (RT) and 800 degrees C. Secondary ion
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