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Kin (Charles) Cheung (Fed)

Physical Scientist

Dr. Cheung is a physical scientist in the Advanced Electronics Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). Prior to joining NIST in 2007, Dr. Cheung was an associate professor in Rutgers University. Prior to Rutgers University, Dr. Cheung spent 18 years as a member of the technical staff at Bell Laboratories in Murray Hill, NJ. Dr. Cheung published over 250 refereed journal and conference papers plus 37 invited papers. In 2000, he wrote and published a monograph titled "Plasma Charging Damage.” He also holds 12 patents. Dr. Cheung taught tutorials in many international conferences. He also served in several committees for these conferences. Dr. Cheung received the Bell Lab President's Gold Award in 1997, and the Outstanding Achievement Award from the International Symposium on Plasma Process-Induced Damage. He is an IEEE fellow, and an associated editor of the IEEE Transaction on Device and Material Reliability.

Dr. Cheung worked on picosecond optoelectronics and THz spectroscopy in the 1980s. He then became involved in silicon VLSI technologies, from processing to technology integration to reliability. His work on plasma-charging-damage led him to drill deep into the gate oxide degradation and breakdown mechanism. His experience in picosecond optoelectronics enables him to push the limit of ultra-fast electrical characterization of devices and leverage the kinetic to differentiate various degradation mechanisms. While at NIST, Dr. Cheung has pushed electrical measurements to a new level to gain insight on device reliability. He also developed new measurements for important device characteristics when reliable measurement does not exist. Decades of reliability research assists Dr. Cheung in recognizing the importance of sufficient sample size for projecting low level failure rate. As a result, he is developing a massively parallel, wafer-level, long-term reliability testing platform at NIST to address extreme reliability requirements for power devices.


A non-defect precursor gate oxide breakdown model

Kin (Charles) Cheung
Understanding defect creation is central to efforts to comprehend gate dielectric breakdown in metal-oxide-semiconductor-field-effect-transistors (MOSFETs)

Patents (2018-Present)

Non-Resonant Electron Spin Resonant Probe And Associated Hardware

NIST Inventors
Jason Campbell , Jason Ryan , Kin (Charles) Cheung , Robert Gougelet and Pragya Shrestha
This invention details a non-resonant probe designed to measure changes in the density of broken bonds (unpaired electrons) in materials exposed to ionizing radiation. The probe functions to excite and detect electron spin resonance transitions in these materials. Accumulated radiation dose can then

Molecular Scrivener For Reading Or Writing Data To A Macromolecule

NIST Inventors
Joseph Robertson and Kin (Charles) Cheung
A molecular scrivener reads data from or writes data to a macromolecule and includes: a pair of shielding electrodes; a scrivener electrode between the first and second shielding electrodes and that electrically floats at a third potential that, in an absence of a charged or dipolar moiety of the
Image of diagrams for the Classic Mach - Zehnder interferometer, Microwae transmission line based vserion, and guided wave probe tip interacts with sample

Phase Shift Detector Process for Making and Use of Same

NIST Inventors
Kin (Charles) Cheung , Jason Ryan and Jason Campbell
The detector senses very small phase shifts in a highly balanced microwave bridge. An electric field optimized microwave probe, in close proximity to a sample, serves to perturb the degree of bridge balance due to a .change in effective dielectric constant of the sample. The major innovation
Created August 15, 2019, Updated May 17, 2024