Josh Pomeroy is an experimental physicist at the National Institute for Standards and Technology (NIST) in the Atomic Scale Devices Group. He performs fundamental research that seeks to improve materials and devices for realizing quantum information transfer between hybrid systems where one component is metal-oxide-semiconductor (MOS). This work has included the development of ultra-highly enriched silicon for use in MOS devices, plasma processing techniques for high quality aluminum oxide and bilayer superconductor studies for using monolithic superconducting elements on MOS systems. Two main thrust areas of this work involve: 1) enriched silicon growth, MOS device fabrication and measurement to develop stable diagnostic qubits for coupling to heterogeneous qubits; and, 2) the refinement of high-quality (low defect density) metals and metal oxides that can be used in conjunction with MOS quantum devices as charge sensors or for coupling to superconducting cavities and devices. Dr. Pomeroy graduated from Cornell University with a M.S. and Ph.D. in Physics and received his undergraduate degree in physics from Boston University.