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Joshua M. Pomeroy (Fed)

Josh Pomeroy is an experimental physicist at the National Institute for Standards and Technology (NIST) in the Atomic Scale Devices Group. He performs fundamental research that seeks to improve materials and devices for realizing quantum information transfer between hybrid systems where one component is metal-oxide-semiconductor (MOS). This work has included the development of ultra-highly enriched silicon for use in MOS devices, plasma processing techniques for high quality aluminum oxide and bilayer superconductor studies for using monolithic superconducting elements on MOS systems. Two main thrust areas of this work involve: 1) enriched silicon growth, MOS device fabrication and measurement to develop stable diagnostic qubits for coupling to heterogeneous qubits; and, 2) the refinement of high-quality (low defect density) metals and metal oxides that can be used in conjunction with MOS quantum devices as charge sensors or for coupling to superconducting cavities and devices. Dr. Pomeroy graduated from Cornell University with a M.S. and Ph.D. in Physics and received his undergraduate degree in physics from Boston University.

Taking Measure Blog

a delivery truck with a question mark hovering over it sits parked near a group of houses as the driver tries to figure out the optimal route to make deliveries. There are a pair of crashed cars near the center of the graphic to illustrate that optimization problems like this are hard to solve.
Credit: N. Hanacek/NIST

Seeking the Power of Quantum Computing in Silicon

Selected Programs/Projects


Enriched Silicon and Devices for Quantum Information

Precision Materials for Quantum Devices

Quantifying the environmental contributions to mass change

Fabrication and Metrology of Novel Magnetic Tunnel Junctions in the Ultra-thin Barrier Limit (Completed)

Selected News

Measuring Up: Coming Out from the Cold

Universe in the Balance

Blazing a Path for Buried Bits in Quantum Chips

Beyond Six Nines: Ultra-enriched Silicon Paves the Road to Quantum Computing

Surface Detail: Oscillator to Explore Secrets of Mass Variation

Enriched Silicon: Going for Four Nines

View more News

NRC Postdoc Opportunities

Enriched Silicon Quantum Devices

Precision Materials for Quantum Devices


DC to GHz measurements of a near-ideal 2D material: P+ monolayers

Neil M. Zimmerman, Antonio Levy, Pradeep Namboodiri, Joshua M. Pomeroy, Xiqiao Wang, Joseph Fox, Richard M. Silver
P+ monolayers in Si are of great scientific and technological interest, both intrinsically as a material in the "ideal vacuum" of crystalline Si, and because

Targeted enrichment of 28Si thin films for quantum computing

Ke Tang, Hyun S. Kim, Aruna N. Ramanayaka, David S. Simons, Joshua M. Pomeroy
We report on the growth of isotopically enriched 28Si epitaxial films with precisely controlled enrichment levels, ranging from natural abundance ratio of 92.2%
Created October 9, 2019, Updated December 8, 2022