Wen, Y.
, Tsui, B.
and Cheung, K.
(2025),
Impact of near interface defects on NO annealed SiC MOSFET mobility, Microelectronics Reliability, [online], https://doi.org/10.1016/j.microrel.2025.115841, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=959480
(Accessed July 19, 2025)
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Impact of near interface defects on NO annealed SiC MOSFET mobility
Published
Author(s)
, Bing-Yue Tsui,
Abstract
A series of recent studies asserted that near-interface-traps (NITs) are introduced by the post-oxidation NO annealing process and these NITs are the cause for the low mobility of NO annealed SiC MOSFETs. We use fast Id-Vg measurement to directly probe these NITs at speed up to 10 ns and to check if these assertions are true. The fast id-Vg measurement has a simple interpretation and conclusively refuted these assertions.Citation
Microelectronics Reliability
Volume
173
Pub Type
Journals
Download Paper
Keywords
SiC, MOSFET, mobility, near interface trap, interface trap, fast Id-Vg
Citation
Issues
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Created July 2, 2025, Updated July 15, 2025