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Projects/Programs

Displaying 51 - 57 of 57

Scanning Probe Microscopy Calibrations and Standards

Ongoing
The Nanomechanical Properties Group has expertise in a wide variety of SPM techniques, especially atomic force microscopy (AFM); however, the main research thrust for the Group’s standards project area deals with accurate cantilever stiffness calibration and the use and development of AFM methods

Single-Cell Manipulation and Measurement

Ongoing
Mammalian cells are an important source material for applications in regenerative medicine, gene therapy, engineering biology, and genome editing. Traditional tools for manipulating mammalian cells operate at a bulk cell population level without precision manipulation of individual cells

Strain Measurement for Semiconductor Devices

Ongoing
Mechanical strain is hugely important to semiconductor devices and packages while also being difficult to measure accurately. Strain is engineered into CMOS channels to improve carrier mobility for higher performance at lower power but is also intrinsically present from manufacturing processes where

Structure, Defects, and Scattering in Graphene

Completed
The graphene honeycomb lattice is a key element in determining many of graphene's spectacular properties, which are desirable for a host of electronic applications. The graphene 6-fold symmetric lattice gives rise to charge carriers behaving like light-waves having zero mass. The charge carriers in

Surface Texture and Forensic Topography

Ongoing
Surface texture and microform Surface texture affects the functionality of many products, ranging from bearings to semiconductors and optics. Affected properties include aesthetics, friction, wear, lubrication, sealing, light scattering, and conductivity. Improvements in parameters and metrology to

Topological Insulators

Ongoing
Dichalcogenide-Based Topological Insulators A family of TI materials can by synthesized by combining binary compounds of Bismuth (Bi) or Antimony (Sb) with Selenium (Se) and Tellurium (Te) to form Bi 2Se 3, Bi 2Te 3, and Sb 2Te 3 compounds. In these material compounds, the spin of the electron has a
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