Projects/Programs

Displaying 1 - 10 of 10

Micrographs of kinetic inductance-based parametric amplifier

Amplifiers

Ongoing

We have developed parametric amplifiers based on two different technologies: Josephson Junctions and superconductors with high kinetic inductance, a representation of the kinetic energy of superconducting Cooper-pair charge carriers. Junction-based parametric amplifiers (JPAs) are well suited for

Designing Advanced Scanning Probe Microscopy Instruments

Ongoing

SPM is a general acronym for various probe instruments. The "P" in SPM stands for various types of probe measurements, such as capacitance (C), force (F), tunneling (T), etc. The scanning tunneling microscope (STM), including custom designs at the CNST, uses the quantum mechanical principle of

Electronic Material Characterization

Ongoing

Manufacturing optimized devices that incorporate newly-emerging materials requires predictable performance throughout device lifetimes. Unexpected degradation in device performance, sometimes leading to failure, is often traceable to poor material reliability. Reliability is rooted in the stability

Engineered Designed Lattice Ferroelectric

Engineered Designer Lattices for Quantum Systems

Ongoing

Exposing the low-dimensional materials to a superlattice periodic potential is an effective way to engineer their electronic and other solid-state properties. One example is the moiré superlattice, created by stacking two-dimensional layers at a twist angle, which leads to novel band structures and

Getting from Qubit to Mega-Qubit Quantum Computers with Radio Frequency (RF) Calibrations

Ongoing

“Getting from Qubit to Mega-Qubit Quantum Computers with RF Calibrations” is a multi-laboratory effort to develop precision radio frequency measurements in the coldest and darkest places on the planet, cryostats and dilution refrigerators. The projects in this multi-laboratory effort are focused on

Graphene

Ongoing

Two remarkable features of graphene that are opening avenues to multiple applications are its high transport carrier mobility and the broad tunability of its electronic properties. Graphene charge carriers can be tuned continuously from negative carriers (i.e., electrons) to positive carriers (holes

Ab initio theoretical modeling for predicting structure and properties in advanced materials

Ongoing

Project activities include: Electronic structure of semiconductor-oxide interfaces. Thermodynamics of flexible microporous materials for gas storage Gas adsorption in microporous materials Analysis of topological materials, including magnetic topological insulators High-throughput screening of

Measurements of Point-Defect Chemistry in Complex Oxides

Ongoing

Project Goal: To develop magnetic resonance, x-ray absorption, electron diffraction, and electrical conductivity measurements to better characterize dilute concentrations of point defects in oxide materials and effectively correlate electro-mechanical properties to measured defect chemistry. Oxide

Moiré Systems

Ongoing

Twisted double bilayer graphene The moiré systems of magic angle twisted bilayer graphene (MATBG) and related heterostructures support topological bands with nonzero Chern number, which is derived from the Berry curvature of the Bloch wave functions. Berry curvature is intimately related to orbital

Topological Insulators

Ongoing

Dichalcogenide-Based Topological Insulators A family of TI materials can by synthesized by combining binary compounds of Bismuth (Bi) or Antimony (Sb) with Selenium (Se) and Tellurium (Te) to form Bi 2Se 3, Bi 2Te 3, and Sb 2Te 3 compounds. In these material compounds, the spin of the electron has a

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