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Search Publications by: Valery Ortiz Jimenez (Fed)

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Displaying 1 - 3 of 3

Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory

March 31, 2025
Author(s)
Pragya Shrestha, Alexander Zaslavsky, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
This paper presents a high-endurance capacitorless one-transistor (1T) cryogenic memory, fabricated in a 180 nm bulk CMOS technology, with a high memory window of (107 I1/I0 sense current ratio) and prolonged retention. The memory is enabled by the

High-endurance bulk CMOS one-transistor cryo-memory

February 28, 2025
Author(s)
Alexander Zaslavsky, Pragya Shrestha, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
Previously we reported a compact one-transistor (1T) 180 nm bulk CMOS cryo-memory with a high 10^7 I_1/I_0 memory window and long 800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and

Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature

December 10, 2023
Author(s)
Valery Ortiz Jimenez, Yen Pham, Da Zhou, Mingzu Liu, Florence Ann Nugera, Vijaysankar Kalappattil, Tatiana Eggers, Khang Hoang, Dinh Loc Duong, Mauricio Terrones, Humberto Rodriguez Gutierrez, Manh-Huong Phan
The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te)
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