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Search Publications by: Albert F. Rigosi (Fed)

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Displaying 76 - 82 of 82

Uncertainty of the Ohm Using Cryogenic and Non-Cryogenic Bridges

July 8, 2018
Author(s)
Alireza Panna, Marlin E. Kraft, Albert Rigosi, George R. Jones Jr., Shamith Payagala, Mattias Kruskopf, Dean G. Jarrett, Randolph Elmquist
We describe recent scaling measurements to decade resistance levels based on both cryogenic and non-cryogenic current comparator bridges. National measurement institutes and the International Bureau of Weights and Measures derive traceability for the SI

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation

March 20, 2018
Author(s)
Albert F. Rigosi, Chieh-I Liu, Bi Y. Wu, Hsin Y. Lee, Mattias Kruskopf, Yanfei Yang, Heather M. Hill, Jiuning Hu, Emily G. Bittle, Jan Obrzut, Angela R. Hight Walker, Randolph E. Elmquist, David B. Newell
When it comes to the advancement of quantized Hall resistance (QHR) standards, homogeneous, single-crystal, monolayer epitaxial graphene (EG) is the most promising candidate. EG-based quantum Hall devices, though emerging as a useful tool for metrology

Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene

December 1, 2017
Author(s)
Albert F. Rigosi, Heather M. Hill, Nicholas R. Glavin, Sujitra J. Pookpanratana, Yanfei Yang, Alexander G. Boosalis, Jiuning Hu, Anthony Rice, Andrew A. Allerman, Nhan V. Nguyen, Christina A. Hacker, Randolph E. Elmquist, Angela R. Hight Walker, David B. Newell
Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter- scale areas and consequently, the large scale single crystal can

Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

November 28, 2017
Author(s)
Heather M. Hill, Albert Rigosi, Sugata Chowdhury, Yanfei Yang, Nhan Van Nguyen, Francesca Tavazza, Randolph Elmquist, David B. Newell, Angela R. Hight Walker
Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer

Electrical stabilization of surface resistivity in epitaxial graphene systems by amorphous boron nitride encapsulation

May 25, 2017
Author(s)
Albert F. Rigosi, Chieh-I Liu, Nicholas R. Glavin, Yanfei Yang, Heather M. Hill, Jiuning Hu, Angela R. Hight Walker, Curt A. Richter, Randolph E. Elmquist, David B. Newell
Homogeneous monolayer epitaxial graphene (EG) is an ideal candidate for the development of millimeter-sized devices with single-crystal domains. A clean fabrication process was used to produce EG-based devices with n-type doping level of order 10^12 cm^-2

Preservation of surface conductivity and dielectric loss tangent in large-scale, encapsulated epitaxial graphene measured by non-contact microwave cavity perturbations

May 19, 2017
Author(s)
Albert F. Rigosi, Nicholas R. Glavin, Chieh-I Liu, Yanfei Yang, Jan Obrzut, Heather M. Hill, Jiuning Hu, Hsin Y. Lee, Angela R. Hight Walker, Curt A. Richter, Randolph E. Elmquist, David B. Newell
Regarding the improvement of current quantized Hall resistance (QHR) standards, one promising avenue is the growth of homogeneous monolayer epitaxial graphene (EG). A clean and simple process was used to produce large, precise areas of EG. Properties like

Molecular beam growth of graphene nanocrystals on dielectric substrates

November 27, 2012
Author(s)
Daniel A. Fischer, Ulrich Wurstbauer, Theanne Schiros, Cherno Jaye, A. S. Plaut, R. He, Albert Rigosi, Liuyan Zhao, Christopher Gutierrez, P. Kim, L. N. Pfeiffer, A. Pasupathy, A. Pinczuk, J. M. Garcia
A variety of methods have been reported to create graphene. These include the pervasive mechanical exfoliation of graphite1, as well as methods that obtain large area graphene such as thermal decomposition of SiC2,3, chemical vapor deposition on transition