Molecular beam growth of graphene nanocrystals on dielectric substrates

Published

November 27, 2012

Author(s)

Daniel A. Fischer, Ulrich Wurstbauer, Theanne Schiros, Cherno Jaye, A. S. Plaut, R. He, Albert Rigosi, Liuyan Zhao, Christopher Gutierrez, P. Kim, L. N. Pfeiffer, A. Pasupathy, A. Pinczuk, J. M. Garcia

Abstract

A variety of methods have been reported to create graphene. These include the pervasive mechanical exfoliation of graphite1, as well as methods that obtain large area graphene such as thermal decomposition of SiC2,3, chemical vapor deposition on transition metals4-6 and molecular beam epitaxy on several substrates7-13. More challenging, and highly desired is the direct growth of high quality graphene layers on large area insulating substrates, an achievement that could enable breakthroughs in electronics and optoelectronics14,15. Here we demonstrate the fabrication of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that may be used on a diverse class of dielectric substrates. Characterizations by Raman and NEXAFS spectroscopies demonstrate the formation of a sp2 hybridized hexagonal carbon lattice. We show that the properties of the deposited materials depend on the growth conditions. For the best ones, Raman analysis indicates that the size of the nanocrystals is approximately 20 nm.

Citation

Carbon

Pub Type

Journals

Keywords

nano materials

Citation

Fischer, D. , Wurstbauer, U. , Schiros, T. , Jaye, C. , Plaut, A. , He, R. , Rigosi, A. , Zhao, L. , Gutierrez, C. , Kim, P. , Pfeiffer, L. , Pasupathy, A. , Pinczuk, A. and Garcia, J. (2012), Molecular beam growth of graphene nanocrystals on dielectric substrates, Carbon (Accessed October 8, 2024)