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Search Publications by: Daniel Gopman (Fed)

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Displaying 1 - 25 of 43

Competing Explanations for Spin Wave Resonances in L10(001) FePd Thin Films with Perpendicular Magnetic Anisotropy

December 2, 2025
Author(s)
Dingbin Huang, Jenae Shoup, Aaron Johnston-Peck, Deyuan Lyu, Jian-Ping Wang, Xiaojia Wang, Daniel Gopman
The Heisenberg exchange constant plays a crucial role in determining the switching behavior of magnetic nano-objects, along with the magnetic anisotropy, saturation magnetization, and Gilbert damping. This work seeks to estimate the exchange stiffness from

Strain Mediated Voltage Control of Magnetic Anisotropy and Magnetization Reversal in Bismuth Substituted Yttrium Iron Garnet Films and Meso-structures

November 21, 2025
Author(s)
Walid Al Misba, Miela Gross, kensuke hayashi, Daniel Gopman, Caroline Ross, Jayasimha Atulasimha
We report on magnetic anisotropy modulation in Bismuth substituted Yttrium Iron Garnet (Bi-YIG) thin films and mesoscale patterned structures deposited on a PMN-PT substrate with the application of voltage-induced strain. The Bi content is selected for low

Energy Efficiency Scaling for 2 Decades (EES2) R&D Roadmap. V1.0 for Compute

April 3, 2025
Author(s)
Tina Kaarsberg, M Ahmed, A Paramonov, Amanda Petford-Long, Y Zhang, C Green, D Braga, F Fatim, F Musso, J Hoff, T Shah, P Nagapurkar, S Pawlowski, W Huang, C Gotama, P Klabbers, A Ziabari, Y Chen, T Wei, B Hirano, T McDonald, A Bhavnagarwala, S Misra, James Booth, Daniel Gopman, P Sharps, J Baniecki, E Salman, J Luo, S Shaheen, D Kudithipudi, J Atulasimha, J Ballard, I Lu, K Shimizu, N Johnson, E Taylor, R Jones, S Shankar
The looming crisis in global energy demand for computing was a key driver for the United States Department of Energy's (DOE) Advanced Materials and Manufacturing Technologies Office (AMMTO) to launch in 2022 a multi-organizational effort to create a

Reduction-Induced Magnetic Behavior in LaFeO3-d Thin Films

March 4, 2024
Author(s)
Nathan Arndt, Eitan Hershkovitz, Labdhi Shah, Kristoffer Kjaernes, Chao-Yao Yang, Purnima Balakrishnan, Mohammed Shariff, Shaun Tauro, Daniel Gopman, Brian Kirby, Alexander Grutter, Thomas Tybell, Honggyu Kim, Ryan Need
The effect of oxygen reduction on the magnetic properties of LaFeO3−δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior

L10 FePd-Based Perpendicular Magnetic Tunnel Junctions with 65% Tunnel Magnetoresistance and Ultralow Switching Current Density

February 9, 2024
Author(s)
Deyuan Lyu, Jenae Shoup, Ali Habiboglu, Qi Jia, Pravin Khanal, Brandon Zink, Yang Lv, Bowei Zhou, Daniel Gopman, Weigang Wang, Jian-Ping Wang
L10 FePd is increasingly recognized as a potential candidate for magnetic tunnel junctions (MTJs), yet there remains room for enhancing device performance. In this work, we fabricated L10 FePd-based perpendicular MTJ devices and achieved a significant

Spin Solar Cell Phenomenon on SMM Impacted CoFeB based Magnetic Tunnel Junctions

May 31, 2023
Author(s)
Marzieh Savadkoohi, Pius Suh, Daniel Gopman, Pawan Tyagi
Spin based photovoltaic (P.V.) effect is a novel concept in the solar energy harvesting area utilizing earth-abundant metals. Unlike previous approaches where Copper and Zinc like metals are oxidized or chemically transformed to yield a photovoltaic effect

Voltage Modulated Magnetic Anisotropy of Rare Earth Iron Garnet Thin Films on a Piezoelectric Substrate

December 19, 2022
Author(s)
Miela Gross, Walid Al Misba, Kensuke Hayashi, Dhritiman Bhattacharya, Daniel Gopman, Jayasimha Atulasimha, Caroline Ross
Voltage-tuning of the magnetic anisotropy is dempnstrated in ferrimagnetic insulating rare earth iron garnets on a piezoelectric substrate, (011)-oriented PMN-PT. A yttrium-substituted dysprosium iron garnet (YDyIG) film 42 nm thick is grown via pulsed

Ferromagnetic resonance and magnetization switching characteristics of perpendicular magnetic tunnel junctions with synthetic antiferromagnetic free layers

January 4, 2022
Author(s)
deyuan lyu, Delin Zhang, Daniel Gopman, Yang Lv, Onri Benally, Jian-Ping Wang
Perpendicular magnetic tunnel junctions (pMTJs) with synthetic antiferromagnetic (SAF) free layers were predicted and recently demonstrated to possess ultrahigh switching speed and ultralow switching current density. However, ferromagnetic resonance (FMR)

Perpendicular magnetic tunnel junctions with multi-interface free layer

December 15, 2021
Author(s)
Pravin Khanal, Bowei Zhou, Magda Andrade, Yanliu Dang, Albert Davydov, Ali Habiboglu, Jonah Saidian, Adam Laurie, Jian-Ping Wang, Daniel Gopman, Weigang Wang
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel

Low damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films

August 25, 2020
Author(s)
Daniel B. Gopman, Xinjun Wang, Delin Zhang, Dingbin Huang, Ryan Wu, Dustin Lattery, K. Andre Mkhoyan, Xiojia Wang, Jian-Ping Wang
Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for exploring next-generation ultrahigh density and ultralow energy spintronic devices. In this work, we experimentally investigate the structural, thermal stability

Structural and magnetic properties of sputtered FePd thin films grown on MgO single-crystal substrates with oblique and normal substrate orientation

July 28, 2020
Author(s)
Xinjun Wang, Sergiy Krylyuk, Daniel Josell, Daniel Gopman, Jian-Ping Wang, Delin Zhang
Materials possessing perpendicular magnetic anisotropy derived from the intrinsic crystal structure, such as in L10 Fe-based alloys, have the potential to deliver superior scaling of magnetic memory elements compared to materials whose anisotropy is
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