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Search Publications by: Daniel Gopman (Fed)

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Displaying 1 - 25 of 34

Reduction-Induced Magnetic Behavior in LaFeO3-d Thin Films

March 4, 2024
Author(s)
Nathan Arndt, Eitan Hershkovitz, Labdhi Shah, Kristoffer Kjaernes, Chao-Yao Yang, Purnima Balakrishnan, Mohammed Shariff, Shaun Tauro, Daniel Gopman, Brian Kirby, Alexander Grutter, Thomas Tybell, Honggyu Kim, Ryan Need
The effect of oxygen reduction on the magnetic properties of LaFeO3−δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior

Voltage Modulated Magnetic Anisotropy of Rare Earth Iron Garnet Thin Films on a Piezoelectric Substrate

December 19, 2022
Author(s)
Miela Gross, Walid Al Misba, Kensuke Hayashi, Dhritiman Bhattacharya, Daniel Gopman, Jayasimha Atulasimha, Caroline Ross
Voltage-tuning of the magnetic anisotropy is dempnstrated in ferrimagnetic insulating rare earth iron garnets on a piezoelectric substrate, (011)-oriented PMN-PT. A yttrium-substituted dysprosium iron garnet (YDyIG) film 42 nm thick is grown via pulsed

Ferromagnetic resonance and magnetization switching characteristics of perpendicular magnetic tunnel junctions with synthetic antiferromagnetic free layers

January 4, 2022
Author(s)
deyuan lyu, Delin Zhang, Daniel Gopman, Yang Lv, Onri Benally, Jian-Ping Wang
Perpendicular magnetic tunnel junctions (pMTJs) with synthetic antiferromagnetic (SAF) free layers were predicted and recently demonstrated to possess ultrahigh switching speed and ultralow switching current density. However, ferromagnetic resonance (FMR)

Perpendicular magnetic tunnel junctions with multi-interface free layer

December 15, 2021
Author(s)
Pravin Khanal, Bowei Zhou, Magda Andrade, Yanliu Dang, Albert Davydov, Ali Habiboglu, Jonah Saidian, Adam Laurie, Jian-Ping Wang, Daniel Gopman, Weigang Wang
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel

Low damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films

August 25, 2020
Author(s)
Daniel B. Gopman, Xinjun Wang, Delin Zhang, Dingbin Huang, Ryan Wu, Dustin Lattery, K. Andre Mkhoyan, Xiojia Wang, Jian-Ping Wang
Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for exploring next-generation ultrahigh density and ultralow energy spintronic devices. In this work, we experimentally investigate the structural, thermal stability

Structural and magnetic properties of sputtered FePd thin films grown on MgO single-crystal substrates with oblique and normal substrate orientation

July 28, 2020
Author(s)
Xinjun Wang, Sergiy Krylyuk, Daniel Josell, Daniel Gopman, Jian-Ping Wang, Delin Zhang
Materials possessing perpendicular magnetic anisotropy derived from the intrinsic crystal structure, such as in L10 Fe-based alloys, have the potential to deliver superior scaling of magnetic memory elements compared to materials whose anisotropy is

Capturing Magnetic Bead-based Arrays Using Perpendicular Magnetic Anisotropy

August 20, 2019
Author(s)
Daniel B. Gopman, Yu-Ching Hsiao, Reem Khojah, Xu Li, Auni Kundu, Cai Chen, Andres Chavez, Taehwan Lee, Zhuyun Xiao, Abdon E. Sepulveda, Rob Candler, Gregory P. Carman, Dino Di Carlo, Christopher Lynch
Designing and implementing means of locally trapping magnetic beads and understanding the factors underlying the bead capture force are important steps toward advancing the capture- release process of magnetic particles for biological applications. In

Magnetoelastic effects in doubly clamped electroplated CoFe micro-beam resonators

March 12, 2019
Author(s)
Margo Staruch, S. P. Bennett, B. R. Matis, J. W. Baldwin, K. Bussmann, Daniel Gopman, Yury Kabanov, June W. Lau, Robert D. Shull, E. Langlois, C. Arrington, J. R. Pillars, Peter Finkel
Magnetostrictive Co77Fe23 films were fabricated on silicon wafers and fully suspended to produce free-standing, doubly clamped, micro-beam resonators. A negative or positive shift in the resonant frequency was observed for magnetic fields applied parallel

Long-Range Electric Field Control of Permalloy Layers in Strain-Coupled Composite Multiferroics

October 18, 2018
Author(s)
Michelle E. Jamer, Colin R. Rementer, Anthony Barra, Alexander Grutter, Kevin Fitzell, Daniel Gopman, Julie Borchers, Gregory P. Carman, Brian Kirby, Jane P. Chang
Artificial composite multiferroic materials can be created by interfacing magnetostrictive and piezoelectric materials, allowing for electric field control of magnetic properties. For multilayer device applications, addition of weakly magnetostrictive

Electric-field control of perpendicular magnetic anisotropy in multiferroic PZT- and PMN- PT//[Co/Ni] composites with negative magnetostriction

July 4, 2018
Author(s)
Daniel B. Gopman, Andrew P. Chen, Cindi L. Dennis, June W. Lau, Robert D. Shull, Gregory P. Carman, Peter Finkel, Margo Staruch, Andres Chavez
A longstanding goal of spintronics is to identify alternatives to current-generated Oersted- fields for magnetization control at the nanoscale. An emerging approach seeks to harness the voltage-induced strain in a proximal piezostrictive layer to modify
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