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Advanced Perpendicular Magnetic Tunnel Junctions for Computation in Random Access Memory

Published

Author(s)

Daniel Gopman, Weigang Wang, William Taylor, Tony Low, Jian-Ping Wang

Abstract

Magnetic random access memory (MRAM) based on perpendicular magnetic tunnel junctions (pMTJs) is one of the core building blocks for beyond-CMOS technologies. Their inherent non-volatility, rad-hardness and endurance (1016) makes pMTJs extremely competitive for computation-in-memory and other DoD applications where security and ruggedness are of the utmost vitality. To deliver on the potential of MRAM for computation-in-memory, reductions in the energy- and delay characteristics of pMTJs must be demonstrated. Based on interfacial- and bulk perpendicular magnetic anisotropy materials, we demonstrate two novel perpendicular synthetic antiferromagnet designs for ultra-fast and ultra-low power switching performance. Our stacks are compatible with or close to the existing pMTJ stack and fabrication process, which will make the technology transition to back-end-of-line semiconductor process practical within a 5-10 year time frame.
Citation
Defense Technical Information Center

Keywords

MRAM, Computational RAM, beyond-CMOS, spintronics, rad-hard

Citation

Gopman, D. , Wang, W. , Taylor, W. , Low, T. and Wang, J. (2022), Advanced Perpendicular Magnetic Tunnel Junctions for Computation in Random Access Memory, Defense Technical Information Center, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=932143 (Accessed March 4, 2024)
Created May 13, 2022, Updated March 6, 2023