NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Frederick Meisenkothen (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 18 of 18

Rotational deformation twins in a HfNbTaTiZr refractory high entropy alloy

September 26, 2024
Author(s)
Oleg Senkov, Frederick Meisenkothen, Robert Wheeler
Results of the analysis of deformation twins formed in HfNbTaTiZr refractory high entropy alloy during compression deformation at 20 °C – 600 °C are reported. All studied twins were formed by rotation of the matrix crystal lattice around a pole and have

Ranging Atom Probe Spectra to Reduce Measurement Bias

July 24, 2024
Author(s)
Frederick Meisenkothen, David Newton, Karen DeRocher, Mark McLean
Atom probe tomography (APT) is emerging as an essential characterization tool in a wide variety of science and engineering fields. For example, APT is helping to foster nascent fields, such as nano-geology [1], and is increasingly being adopted by the

Pore and Grain Chemistry during sintering of garnet-type Li6.4La3Zr1.4Ta0.6O12 solid-state electrolytes

March 11, 2022
Author(s)
Joshua Hammons, J. Ali Espitia, Erika Ramos, Rongpei Shi, Frederick Meisenkothen, Marissa Wood, Maira Ceron-Hernandez, Jianchao Ye
Garnet-type solid-state electrolytes have significant advantages over liquid organic electrolytes but require energy-intensive sintering to achieve high density and ionic conductivity. The aim of this study is to understand the chemical and microstructural

Atom probe tomography for isotopic analysis: development of the 34S/32S system in sulfides

November 12, 2021
Author(s)
Phillip Gopon, James Douglas, Frederick Meisenkothen, Jaspreet Singh, Andrew London, Michael Moody
Using a combination of simulated data and pyrite isotopic reference materials, we have refined a methodology to obtain quantitative δ34S measurements from atom probe tomography (APT) datasets. This study builds on previous attempts to characterize relative

Adaptive Peak Fitting for Isotope Analysis via Atom Probe Mass Spectrometry

July 30, 2021
Author(s)
Frederick Meisenkothen, Daniel Samarov, Mark McLean, Irina Kalish, Eric B. Steel
Atom probe tomography (APT) is an emergent characterization technique that has begun to see widespread use within the last 15 years. The technique offers the highest spatial resolution of any mass spectrometry technique for solid-state specimens, as well

Atom Probe Mass Spectrometry of Uranium Isotopic Reference Materials

July 22, 2020
Author(s)
Frederick Meisenkothen, Mark McLean, Irina Kalish, Daniel V. Samarov, Eric B. Steel
Atom probe tomography (APT) has the highest spatial resolution of any mass spectrometry technique, permitting chemically and isotopically resolved images to be recorded at near-atomic length scales. The technique also has a combined ionization efficiency

Exploring the Accuracy of Isotopic Analyses in Atom Probe Mass Spectrometry

May 21, 2020
Author(s)
Frederick Meisenkothen, Daniel V. Samarov, Irina Kalish, Eric B. Steel
Atom probe tomography (APT) can theoretically deliver accurate chemical and isotopic analyses at a high level of sensitivity, precision, and spatial resolution. However, empirical APT data often contain significant biases that lead to erroneous chemical

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

July 30, 2018
Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

January 26, 2018
Author(s)
Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the development of both ultra- scaled conventional semiconductor devices and emerging all-silicon
Was this page helpful?