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Publications

Search Publications by

Frederick Meisenkothen (Fed)

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Displaying 1 - 13 of 13

Atom probe tomography for isotopic analysis: development of the 34S/32S system in sulfides

November 12, 2021
Author(s)
Phillip Gopon, James Douglas, Frederick Meisenkothen, Jaspreet Singh, Andrew London, Michael Moody
Using a combination of simulated data and pyrite isotopic reference materials, we have refined a methodology to obtain quantitative δ34S measurements from atom probe tomography (APT) datasets. This study builds on previous attempts to characterize relative

Adaptive Peak Fitting for Isotope Analysis via Atom Probe Mass Spectrometry

July 30, 2021
Author(s)
Frederick Meisenkothen, Daniel Samarov, Mark McLean, Irina Kalish, Eric B. Steel
Atom probe tomography (APT) is an emergent characterization technique that has begun to see widespread use within the last 15 years. The technique offers the highest spatial resolution of any mass spectrometry technique for solid-state specimens, as well

Atom Probe Mass Spectrometry of Uranium Isotopic Reference Materials

July 22, 2020
Author(s)
Frederick Meisenkothen, Mark McLean, Irina Kalish, Daniel V. Samarov, Eric B. Steel
Atom probe tomography (APT) has the highest spatial resolution of any mass spectrometry technique, permitting chemically and isotopically resolved images to be recorded at near-atomic length scales. The technique also has a combined ionization efficiency

Exploring the Accuracy of Isotopic Analyses in Atom Probe Mass Spectrometry

May 21, 2020
Author(s)
Frederick Meisenkothen, Daniel V. Samarov, Irina Kalish, Eric B. Steel
Atom probe tomography (APT) can theoretically deliver accurate chemical and isotopic analyses at a high level of sensitivity, precision, and spatial resolution. However, empirical APT data often contain significant biases that lead to erroneous chemical

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

July 30, 2018
Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

January 26, 2018
Author(s)
Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the development of both ultra- scaled conventional semiconductor devices and emerging all-silicon