January 22, 2013
Author(s)
Harward Ian, Yan Nie, Daming Chen, Josh Baptist, Justin Shaw, Eva J. Liskova, Stefan Visnovsky, Petr Siroky, Michal Lesnak, Jaromir Pistora, Zbigniew Celinski
We developed the thin film microwave magnetic material, M-type barium hexagonal ferrite (BaM) doped with Al, for signal processing devices operating above 40 GHz with little to no applied magnetic field. Al was chosen as the dopant material because it