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Search Publications by: William Alexander Osborn (Fed)

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Displaying 26 - 31 of 31

Surface mediated assembly of small, metastable gold nanoclusters

May 27, 2013
Author(s)
John M. Pettibone, William A. Osborn, Konrad Rykaczewski, Albert A. Talin, John E. Bonevich, Jeffrey W. Hudgens
The unique properties of metallic nanoclusters are attractive for numerous commercial and industrial applications but are generally less stable than nanocrystals. Thus, developing methodologies for stabilizing nanoclusters and retaining their enhanced

How nanorough is rough enough?

June 21, 2012
Author(s)
Konrad Rykaczewski, William A. Osborn, Jeff Chinn, Marlon L. Walker, John H. Scott, Wanda Jones, Chonglei Hao, Shuhuai Yao, Zuankai Wang
Surfaces which evince superhydrophobic properties during water condensation have a potential to dramatically enhance energy efficiency in power generation and desalination systems. Although various such surfaces have been reported, their development has

Discovery of giant magnetostriction in annealed Co1-xFex thin-films

November 1, 2011
Author(s)
Dwight Hunter, William Alexander Osborn, Ke Wang, Nataliya Kazantseva, Jason Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Sam E. Lofland, Manfred Wuttig, Ichiro Takeuchi
Chemical and structural heterogeneity and resulting interaction of coexisting phases can lead to extraordinary behaviors in oxides as observed in piezoelectric materials at morphotropic phase boundaries and relaxor ferroelectrics. But such phenomena are

Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via

October 11, 2011
Author(s)
Ryan P. Koseski, William Alexander Osborn, Stephan J. Stranick, Frank W. DelRio, Mark D. Vaudin, Thuy Dao, Vance H. Adams, Robert F. Cook
The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabrication
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